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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	IRF9Z24NSPBF	RFQ VIEW	PDF RFQ	739 In-stock	Infineon Technologies	MOSFET P-CH 55V 12A D2PAK		HEXFET®	Discontinued at Digi-Key	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	3.8W (Ta), 45W (Tc)	P-Channel	-	55V	12A (Tc)	175 mOhm @ 7.2A, 10V	4V @ 250µA	19nC @ 10V	350pF @ 25V	10V	±20V
	IRF9Z24NSTRR	RFQ VIEW	PDF RFQ	3,219 In-stock	Infineon Technologies	MOSFET P-CH 55V 12A D2PAK		HEXFET®	Obsolete	Tape & Reel (TR)	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	3.8W (Ta), 45W (Tc)	P-Channel	-	55V	12A (Tc)	175 mOhm @ 7.2A, 10V	4V @ 250µA	19nC @ 10V	350pF @ 25V	10V	±20V
	IRF9Z24NSTRL	RFQ VIEW	PDF RFQ	2,280 In-stock	Infineon Technologies	MOSFET P-CH 55V 12A D2PAK		HEXFET®	Obsolete	Tape & Reel (TR)	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	3.8W (Ta), 45W (Tc)	P-Channel	-	55V	12A (Tc)	175 mOhm @ 7.2A, 10V	4V @ 250µA	19nC @ 10V	350pF @ 25V	10V	±20V
	IRF9Z24NL	RFQ VIEW	PDF RFQ	1,736 In-stock	Infineon Technologies	MOSFET P-CH 55V 12A TO-262		HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	TO-262	3.8W (Ta), 45W (Tc)	P-Channel	-	55V	12A (Tc)	175 mOhm @ 7.2A, 10V	4V @ 250µA	19nC @ 10V	350pF @ 25V	10V	±20V
	IRF9Z24NSTRLPBF	RFQ VIEW	PDF RFQ	2,455 In-stock	Infineon Technologies	MOSFET P-CH 55V 12A D2PAK		HEXFET®	Active	Digi-Reel®	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	3.8W (Ta), 45W (Tc)	P-Channel	-	55V	12A (Tc)	175 mOhm @ 7.2A, 10V	4V @ 250µA	19nC @ 10V	350pF @ 25V	10V	±20V
	IRF9Z24NSTRLPBF	RFQ VIEW	PDF RFQ	836 In-stock	Infineon Technologies	MOSFET P-CH 55V 12A D2PAK		HEXFET®	Active	Cut Tape (CT)	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	3.8W (Ta), 45W (Tc)	P-Channel	-	55V	12A (Tc)	175 mOhm @ 7.2A, 10V	4V @ 250µA	19nC @ 10V	350pF @ 25V	10V	±20V
	IRF9Z24NSTRLPBF	RFQ VIEW	PDF RFQ	3,148 In-stock	Infineon Technologies	MOSFET P-CH 55V 12A D2PAK		HEXFET®	Active	Tape & Reel (TR)	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	3.8W (Ta), 45W (Tc)	P-Channel	-	55V	12A (Tc)	175 mOhm @ 7.2A, 10V	4V @ 250µA	19nC @ 10V	350pF @ 25V	10V	±20V
	IRF9Z24NLPBF	RFQ VIEW	PDF RFQ	1,609 In-stock	Infineon Technologies	MOSFET P-CH 55V 12A TO-262		HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	TO-262	3.8W (Ta), 45W (Tc)	P-Channel	-	55V	12A (Tc)	175 mOhm @ 7.2A, 10V	4V @ 250µA	19nC @ 10V	350pF @ 25V	10V	±20V
	IRF9Z24NS	RFQ VIEW	PDF RFQ	1,595 In-stock	Infineon Technologies	MOSFET P-CH 55V 12A D2PAK		HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	3.8W (Ta), 45W (Tc)	P-Channel	-	55V	12A (Tc)	175 mOhm @ 7.2A, 10V	4V @ 250µA	19nC @ 10V	350pF @ 25V	10V	±20V
	IRF9Z24NPBF	RFQ VIEW	PDF RFQ	3,963 In-stock	Infineon Technologies	MOSFET P-CH 55V 12A TO-220AB		HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AB	45W (Tc)	P-Channel	-	55V	12A (Tc)	175 mOhm @ 7.2A, 10V	4V @ 250µA	19nC @ 10V	350pF @ 25V	10V	±20V

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