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- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
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6 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
1,283
In-stock
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Diodes Incorporated | MOSFET P-CH 12V 9.5A U-DFN2020-6 | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type F) | 730mW (Ta) | P-Channel | - | 12V | 9.5A (Ta) | 15.3 mOhm @ 4A, 4.5V | 800mV @ 250µA | 48.3nC @ 8V | 2712pF @ 10V | 1.5V, 4.5V | ±8V | |||
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VIEW |
2,052
In-stock
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Diodes Incorporated | MOSFET P-CH 12V 9.5A U-DFN2020-6 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type F) | 730mW (Ta) | P-Channel | - | 12V | 9.5A (Ta) | 15.3 mOhm @ 4A, 4.5V | 800mV @ 250µA | 48.3nC @ 8V | 2712pF @ 10V | 1.5V, 4.5V | ±8V | |||
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VIEW |
3,591
In-stock
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Diodes Incorporated | MOSFET P-CH 12V 9.5A U-DFN2020-6 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type F) | 730mW (Ta) | P-Channel | - | 12V | 9.5A (Ta) | 15.3 mOhm @ 4A, 4.5V | 800mV @ 250µA | 48.3nC @ 8V | 2712pF @ 10V | 1.5V, 4.5V | ±8V | |||
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VIEW |
3,762
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 10A UDFN6B | U-MOSVI | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1W (Ta) | P-Channel | - | 20V | 10A (Ta) | 15.3 mOhm @ 4A, 4.5V | 1V @ 1mA | 29.9nC @ 4.5V | 2600pF @ 10V | 1.5V, 4.5V | ±8V | |||
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VIEW |
712
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 10A UDFN6B | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1W (Ta) | P-Channel | - | 20V | 10A (Ta) | 15.3 mOhm @ 4A, 4.5V | 1V @ 1mA | 29.9nC @ 4.5V | 2600pF @ 10V | 1.5V, 4.5V | ±8V | |||
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VIEW |
3,133
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 10A UDFN6B | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1W (Ta) | P-Channel | - | 20V | 10A (Ta) | 15.3 mOhm @ 4A, 4.5V | 1V @ 1mA | 29.9nC @ 4.5V | 2600pF @ 10V | 1.5V, 4.5V | ±8V | |||
