Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SSM3K318T,LF
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RFQ
2,466
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Toshiba Semiconductor and Storage MOSFET N-CH 60V 2.5A TSM U-MOSIV Discontinued at Digi-Key Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 TSM 700mW (Ta) N-Channel - 60V 2.5A (Ta) 107 mOhm @ 2A, 10V - 7nC @ 10V 235pF @ 30V 4.5V, 10V ±20V
SSM3K318T,LF
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RFQ
3,347
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 60V 2.5A TSM U-MOSIV Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 TSM 700mW (Ta) N-Channel - 60V 2.5A (Ta) 107 mOhm @ 2A, 10V - 7nC @ 10V 235pF @ 30V 4.5V, 10V ±20V
SSM3K318R,LF
RFQ
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RFQ
1,916
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 60V 2.5A TSM U-MOSIV Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-23-3 Flat Leads SOT-23F 1W (Ta) N-Channel - 60V 2.5A (Ta) 107 mOhm @ 2A, 10V 2.8V @ 1mA 7nC @ 10V 235pF @ 30V 4.5V, 10V ±20V
SSM3K318R,LF
RFQ
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RFQ
1,157
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 60V 2.5A TSM U-MOSIV Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-23-3 Flat Leads SOT-23F 1W (Ta) N-Channel - 60V 2.5A (Ta) 107 mOhm @ 2A, 10V 2.8V @ 1mA 7nC @ 10V 235pF @ 30V 4.5V, 10V ±20V
SSM3K318R,LF
RFQ
VIEW
RFQ
1,090
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 60V 2.5A TSM U-MOSIV Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-23-3 Flat Leads SOT-23F 1W (Ta) N-Channel - 60V 2.5A (Ta) 107 mOhm @ 2A, 10V 2.8V @ 1mA 7nC @ 10V 235pF @ 30V 4.5V, 10V ±20V