Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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STFU18N65M2
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3,297
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STMicroelectronics MOSFET N-CH 650V 12A MDmesh™ M2 Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FP 25W (Tc) N-Channel - 650V 12A (Tc) 330 mOhm @ 6A, 10V 4V @ 250µA 20nC @ 10V 770pF @ 100V 10V ±25V
STI18N65M2
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3,182
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STMicroelectronics MOSFET N-CH 650V 12A I2PAK MDmesh™ M2 Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 110W (Tc) N-Channel - 650V 12A (Tc) 330 mOhm @ 6A, 10V 4V @ 250µA 20nC @ 10V 770pF @ 100V 10V ±25V
STF18N65M2
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2,070
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STMicroelectronics MOSFET N-CH 650V 12A TO220FP MDmesh™ M2 Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FP 25W (Tc) N-Channel - 650V 12A (Tc) 330 mOhm @ 6A, 10V 4V @ 250µA 20nC @ 10V 770pF @ 100V 10V ±25V
STP18N65M2
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RFQ
3,654
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STMicroelectronics MOSFET N-CH 650V 12A TO220 MDmesh™ M2 Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220 110W (Tc) N-Channel - 650V 12A (Tc) 330 mOhm @ 6A, 10V 4V @ 250µA 20nC @ 10V 770pF @ 100V 10V ±25V