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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	AUIRFS3006	RFQ VIEW	PDF RFQ	632 In-stock	Infineon Technologies	MOSFET N-CH 60V 270A D2PAK		HEXFET®	Discontinued at Digi-Key	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	375W (Tc)	N-Channel	-	60V	195A (Tc)	2.5 mOhm @ 170A, 10V	4V @ 250µA	300nC @ 10V	8970pF @ 50V	10V	±20V
	IRFB3006GPBF	RFQ VIEW	PDF RFQ	2,286 In-stock	Infineon Technologies	MOSFET N-CH 60V 195A TO220AB		HEXFET®	Not For New Designs	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AB	375W (Tc)	N-Channel	-	60V	195A (Tc)	2.5 mOhm @ 170A, 10V	4V @ 250µA	300nC @ 10V	8970pF @ 50V	10V	±20V
	IRFS3006PBF	RFQ VIEW	PDF RFQ	2,177 In-stock	Infineon Technologies	MOSFET N-CH 60V 195A D2PAK		HEXFET®	Not For New Designs	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	375W (Tc)	N-Channel	-	60V	195A (Tc)	2.5 mOhm @ 170A, 10V	4V @ 250µA	300nC @ 10V	8970pF @ 50V	10V	±20V
	IRFP3006PBF	RFQ VIEW	PDF RFQ	2,908 In-stock	Infineon Technologies	MOSFET N-CH 60V 257A TO247		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247AC	375W (Tc)	N-Channel	-	60V	195A (Tc)	2.5 mOhm @ 170A, 10V	4V @ 250µA	300nC @ 10V	8970pF @ 50V	10V	±20V
	IRFSL3006PBF	RFQ VIEW	PDF RFQ	2,340 In-stock	Infineon Technologies	MOSFET N-CH 60V 195A TO262		HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	TO-262	375W (Tc)	N-Channel	-	60V	195A (Tc)	2.5 mOhm @ 170A, 10V	4V @ 250µA	300nC @ 10V	8970pF @ 50V	10V	±20V
	IRFB3006PBF	RFQ VIEW	PDF RFQ	2,902 In-stock	Infineon Technologies	MOSFET N-CH 60V 195A TO-220AB		HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AB	375W (Tc)	N-Channel	-	60V	195A (Tc)	2.5 mOhm @ 170A, 10V	4V @ 250µA	300nC @ 10V	8970pF @ 50V	10V	±20V
	IRFS3006TRLPBF	RFQ VIEW	PDF RFQ	1,419 In-stock	Infineon Technologies	MOSFET N-CH 60V 195A D2PAK		HEXFET®	Active	Digi-Reel®	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	375W (Tc)	N-Channel	-	60V	195A (Tc)	2.5 mOhm @ 170A, 10V	4V @ 250µA	300nC @ 10V	8970pF @ 50V	10V	±20V
	IRFS3006TRLPBF	RFQ VIEW	PDF RFQ	3,499 In-stock	Infineon Technologies	MOSFET N-CH 60V 195A D2PAK		HEXFET®	Active	Cut Tape (CT)	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	375W (Tc)	N-Channel	-	60V	195A (Tc)	2.5 mOhm @ 170A, 10V	4V @ 250µA	300nC @ 10V	8970pF @ 50V	10V	±20V
	IRFS3006TRLPBF	RFQ VIEW	PDF RFQ	3,805 In-stock	Infineon Technologies	MOSFET N-CH 60V 195A D2PAK		HEXFET®	Active	Tape & Reel (TR)	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	375W (Tc)	N-Channel	-	60V	195A (Tc)	2.5 mOhm @ 170A, 10V	4V @ 250µA	300nC @ 10V	8970pF @ 50V	10V	±20V

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