Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRL530NSTRR
RFQ
VIEW
RFQ
2,608
In-stock
Infineon Technologies MOSFET N-CH 100V 17A D2PAK HEXFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.8W (Ta), 79W (Tc) N-Channel - 100V 17A (Tc) 100 mOhm @ 9A, 10V 2V @ 250µA 34nC @ 5V 800pF @ 25V 4V, 10V ±20V
IRL530NSTRL
RFQ
VIEW
RFQ
1,342
In-stock
Infineon Technologies MOSFET N-CH 100V 17A D2PAK HEXFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.8W (Ta), 79W (Tc) N-Channel - 100V 17A (Tc) 100 mOhm @ 9A, 10V 2V @ 250µA 34nC @ 5V 800pF @ 25V 4V, 10V ±20V
IRL530NL
RFQ
VIEW
RFQ
3,984
In-stock
Infineon Technologies MOSFET N-CH 100V 17A TO-262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 3.8W (Ta), 79W (Tc) N-Channel - 100V 17A (Tc) 100 mOhm @ 9A, 10V 2V @ 250µA 34nC @ 5V 800pF @ 25V 4V, 10V ±20V
IRL530NSTRRPBF
RFQ
VIEW
RFQ
1,128
In-stock
Infineon Technologies MOSFET N-CH 100V 17A D2PAK HEXFET® Not For New Designs Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.8W (Ta), 79W (Tc) N-Channel - 100V 17A (Tc) 100 mOhm @ 9A, 10V 2V @ 250µA 34nC @ 5V 800pF @ 25V 4V, 10V ±20V
IRLI530N
RFQ
VIEW
RFQ
2,374
In-stock
Infineon Technologies MOSFET N-CH 100V 12A TO220FP HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack TO-220AB Full-Pak 41W (Tc) N-Channel - 100V 12A (Tc) 100 mOhm @ 9A, 10V 2V @ 250µA 34nC @ 5V 800pF @ 25V 4V, 10V ±16V
94-2310
RFQ
VIEW
RFQ
1,266
In-stock
Infineon Technologies MOSFET N-CH 100V 17A D2PAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.8W (Ta), 79W (Tc) N-Channel - 100V 17A (Tc) 100 mOhm @ 9A, 10V 2V @ 250µA 34nC @ 5V 800pF @ 25V 4V, 10V ±20V
IRL530NSPBF
RFQ
VIEW
RFQ
941
In-stock
Infineon Technologies MOSFET N-CH 100V 17A D2PAK HEXFET® Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.8W (Ta), 79W (Tc) N-Channel - 100V 17A (Tc) 100 mOhm @ 9A, 10V 2V @ 250µA 34nC @ 5V 800pF @ 25V 4V, 10V ±20V
IRL530NSTRLPBF
RFQ
VIEW
RFQ
2,417
In-stock
Infineon Technologies MOSFET N-CH 100V 17A D2PAK HEXFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.8W (Ta), 79W (Tc) N-Channel - 100V 17A (Tc) 100 mOhm @ 9A, 10V 2V @ 250µA 34nC @ 5V 800pF @ 25V 4V, 10V ±20V
IRL530NSTRLPBF
RFQ
VIEW
RFQ
2,598
In-stock
Infineon Technologies MOSFET N-CH 100V 17A D2PAK HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.8W (Ta), 79W (Tc) N-Channel - 100V 17A (Tc) 100 mOhm @ 9A, 10V 2V @ 250µA 34nC @ 5V 800pF @ 25V 4V, 10V ±20V
IRL530NSTRLPBF
RFQ
VIEW
RFQ
2,192
In-stock
Infineon Technologies MOSFET N-CH 100V 17A D2PAK HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.8W (Ta), 79W (Tc) N-Channel - 100V 17A (Tc) 100 mOhm @ 9A, 10V 2V @ 250µA 34nC @ 5V 800pF @ 25V 4V, 10V ±20V
IRL530NPBF
RFQ
VIEW
RFQ
2,638
In-stock
Infineon Technologies MOSFET N-CH 100V 17A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 79W (Tc) N-Channel - 100V 17A (Tc) 100 mOhm @ 9A, 10V 2V @ 250µA 34nC @ 5V 800pF @ 25V 4V, 10V ±16V
IRLI530NPBF
RFQ
VIEW
RFQ
1,457
In-stock
Infineon Technologies MOSFET N-CH 100V 12A TO220FP HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack TO-220AB Full-Pak 41W (Tc) N-Channel - 100V 12A (Tc) 100 mOhm @ 9A, 10V 2V @ 250µA 34nC @ 5V 800pF @ 25V 4V, 10V ±16V