Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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BSC22DN20NS3GATMA1
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Infineon Technologies MOSFET N-CH 200V 7A 8TDSON OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 34W (Tc) N-Channel - 200V 7A (Tc) 225 mOhm @ 3.5A, 10V 4V @ 13µA 5.6nC @ 10V 430pF @ 100V 10V ±20V
BSC22DN20NS3GATMA1
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3,658
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Infineon Technologies MOSFET N-CH 200V 7A 8TDSON OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 34W (Tc) N-Channel - 200V 7A (Tc) 225 mOhm @ 3.5A, 10V 4V @ 13µA 5.6nC @ 10V 430pF @ 100V 10V ±20V
BSC22DN20NS3GATMA1
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1,693
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Infineon Technologies MOSFET N-CH 200V 7A 8TDSON OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 34W (Tc) N-Channel - 200V 7A (Tc) 225 mOhm @ 3.5A, 10V 4V @ 13µA 5.6nC @ 10V 430pF @ 100V 10V ±20V
BSZ22DN20NS3GATMA1
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2,564
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Infineon Technologies MOSFET N-CH 200V 7A 8TSDSON OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8 34W (Tc) N-Channel - 200V 7A (Tc) 225 mOhm @ 3.5A, 10V 4V @ 13µA 5.6nC @ 10V 430pF @ 100V 10V ±20V
BSZ22DN20NS3GATMA1
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RFQ
1,332
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Infineon Technologies MOSFET N-CH 200V 7A 8TSDSON OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8 34W (Tc) N-Channel - 200V 7A (Tc) 225 mOhm @ 3.5A, 10V 4V @ 13µA 5.6nC @ 10V 430pF @ 100V 10V ±20V
BSZ22DN20NS3GATMA1
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1,063
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Infineon Technologies MOSFET N-CH 200V 7A 8TSDSON OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8 34W (Tc) N-Channel - 200V 7A (Tc) 225 mOhm @ 3.5A, 10V 4V @ 13µA 5.6nC @ 10V 430pF @ 100V 10V ±20V