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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Supplier Device Package	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	EPC2031ENGRT	RFQ VIEW	PDF RFQ	813 In-stock	EPC	MOSFET NCH 60V 31A DIE		eGaN®	Active	Digi-Reel®	GaNFET (Gallium Nitride)	-40°C ~ 150°C (TJ)	Surface Mount	Die	N-Channel	60V	31A (Ta)	2.6 mOhm @ 30A, 5V	2.5V @ 15mA	17nC @ 5V	1800pF @ 300V	5V	+6V, -4V
	EPC2031ENGRT	RFQ VIEW	PDF RFQ	3,487 In-stock	EPC	MOSFET NCH 60V 31A DIE		eGaN®	Active	Cut Tape (CT)	GaNFET (Gallium Nitride)	-40°C ~ 150°C (TJ)	Surface Mount	Die	N-Channel	60V	31A (Ta)	2.6 mOhm @ 30A, 5V	2.5V @ 15mA	17nC @ 5V	1800pF @ 300V	5V	+6V, -4V
	EPC2031ENGRT	RFQ VIEW	PDF RFQ	3,857 In-stock	EPC	MOSFET NCH 60V 31A DIE		eGaN®	Active	Tape & Reel (TR)	GaNFET (Gallium Nitride)	-40°C ~ 150°C (TJ)	Surface Mount	Die	N-Channel	60V	31A (Ta)	2.6 mOhm @ 30A, 5V	2.5V @ 15mA	17nC @ 5V	1800pF @ 300V	5V	+6V, -4V
	EPC2031	RFQ VIEW	PDF RFQ	627 In-stock	EPC	MOSFET NCH 60V 31A DIE		eGaN®	Active	Digi-Reel®	GaNFET (Gallium Nitride)	-40°C ~ 150°C (TJ)	-	-	N-Channel	60V	31A (Ta)	2.6 mOhm @ 30A, 5V	2.5V @ 15mA	17nC @ 5V	1800pF @ 300V	-	-
	EPC2031	RFQ VIEW	PDF RFQ	621 In-stock	EPC	MOSFET NCH 60V 31A DIE		eGaN®	Active	Cut Tape (CT)	GaNFET (Gallium Nitride)	-40°C ~ 150°C (TJ)	-	-	N-Channel	60V	31A (Ta)	2.6 mOhm @ 30A, 5V	2.5V @ 15mA	17nC @ 5V	1800pF @ 300V	-	-
	EPC2031	RFQ VIEW	PDF RFQ	1,931 In-stock	EPC	MOSFET NCH 60V 31A DIE		eGaN®	Active	Tape & Reel (TR)	GaNFET (Gallium Nitride)	-40°C ~ 150°C (TJ)	-	-	N-Channel	60V	31A (Ta)	2.6 mOhm @ 30A, 5V	2.5V @ 15mA	17nC @ 5V	1800pF @ 300V	-	-

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