Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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ON Semiconductor MOSFET N-CH 30V 6.3A SUPERSOT6 PowerTrench® Obsolete - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 SuperSOT™-6 800mW N-Channel - 30V 6.3A 25 mOhm @ 6.3A, 10V 3V @ 250µA 13nC @ 10V 620pF @ 15V 4.5V, 10V ±20V
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3,091
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EPC TRANS GAN 350V BUMPED DIE eGaN® Active Digi-Reel® GaNFET (Gallium Nitride) -40°C ~ 150°C (TJ) Surface Mount Die Die Outline (12-Solder Bar) - N-Channel - 350V 6.3A 65 mOhm @ 6A, 5V 2.5V @ 1.5mA 4.3nC @ 5V 505pF @ 280V 5V +6V, -4V
EPC2050ENGRT
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3,877
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EPC TRANS GAN 350V BUMPED DIE eGaN® Active Cut Tape (CT) GaNFET (Gallium Nitride) -40°C ~ 150°C (TJ) Surface Mount Die Die Outline (12-Solder Bar) - N-Channel - 350V 6.3A 65 mOhm @ 6A, 5V 2.5V @ 1.5mA 4.3nC @ 5V 505pF @ 280V 5V +6V, -4V
EPC2050ENGRT
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3,464
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EPC TRANS GAN 350V BUMPED DIE eGaN® Active Tape & Reel (TR) GaNFET (Gallium Nitride) -40°C ~ 150°C (TJ) Surface Mount Die Die Outline (12-Solder Bar) - N-Channel - 350V 6.3A 65 mOhm @ 6A, 5V 2.5V @ 1.5mA 4.3nC @ 5V 505pF @ 280V 5V +6V, -4V