Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Vgs (Max) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
BSP321PL6327HTSA1
RFQ
VIEW
RFQ
2,399
In-stock
Infineon Technologies MOSFET P-CH 100V 0.98A SOT-223 SIPMOS® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) P-Channel - 100V 980mA (Tc) 900 mOhm @ 980mA, 10V 4V @ 380µA 12nC @ 10V 319pF @ 25V 10V ±20V
PMR280UN,115
RFQ
VIEW
RFQ
1,497
In-stock
NXP USA Inc. MOSFET N-CH 20V 0.98A SOT416 TrenchMOS™ Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SC-75, SOT-416 SC-75 530mW (Tc) N-Channel - 20V 980mA (Tc) 340 mOhm @ 200mA, 4.5V 1V @ 250µA 0.89nC @ 4.5V 45pF @ 20V 1.8V, 4.5V ±8V
PMR280UN,115
RFQ
VIEW
RFQ
3,156
In-stock
NXP USA Inc. MOSFET N-CH 20V 0.98A SOT416 TrenchMOS™ Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SC-75, SOT-416 SC-75 530mW (Tc) N-Channel - 20V 980mA (Tc) 340 mOhm @ 200mA, 4.5V 1V @ 250µA 0.89nC @ 4.5V 45pF @ 20V 1.8V, 4.5V ±8V
PMR280UN,115
RFQ
VIEW
RFQ
1,780
In-stock
NXP USA Inc. MOSFET N-CH 20V 0.98A SOT416 TrenchMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SC-75, SOT-416 SC-75 530mW (Tc) N-Channel - 20V 980mA (Tc) 340 mOhm @ 200mA, 4.5V 1V @ 250µA 0.89nC @ 4.5V 45pF @ 20V 1.8V, 4.5V ±8V
BSP321PH6327XTSA1
RFQ
VIEW
RFQ
3,670
In-stock
Infineon Technologies MOSFET P-CH 100V 980MA SOT223 SIPMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) P-Channel - 100V 980mA (Tc) 900 mOhm @ 980mA, 10V 4V @ 380µA 12nC @ 10V 319pF @ 25V 10V ±20V