Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPL65R420E6AUMA1
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3,562
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Infineon Technologies MOSFET N-CH 4VSON CoolMOS™ E6 Last Time Buy Tape & Reel (TR) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount 4-PowerTSFN Thin-Pak (8x8) 83W (Tc) N-Channel - 650V 10.1A (Tc) 420 mOhm @ 3.4A, 10V 3.5V @ 300µA 39nC @ 10V 710pF @ 100V 10V ±20V
IPD65R650CEATMA1
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1,274
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Infineon Technologies MOSFET N-CH 650V 10.1A TO252 CoolMOS™ Last Time Buy Tape & Reel (TR) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 86W (Tc) N-Channel Super Junction 650V 10.1A (Tc) 650 mOhm @ 2.1A, 10V 3.5V @ 0.21mA 23nC @ 10V 440pF @ 100V 10V ±20V
IPAN65R650CEXKSA1
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3,183
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Infineon Technologies MOSFET NCH 650V 10.1A TO220-3 CoolMOS™ Active Tube MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack PG-TO220 Full Pack 28W (Tc) N-Channel Super Junction 650V 10.1A (Tc) 650 mOhm @ 2.1A, 10V 3.5V @ 210µA 23nC @ 10V 440pF @ 100V 10V ±20V
IPS65R650CEAKMA1
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3,966
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Infineon Technologies MOSFET N-CH 700V 10.1A IPAK - Active Tube MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Through Hole TO-251-3 Stub Leads, IPak IPAK (TO-251) 86W (Tc) N-Channel - 700V 10.1A (Tc) 650 mOhm @ 2.1A, 10V 3.5V @ 210µA 23nC @ 10V 440pF @ 100V 10V ±20V