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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	SI4660DY-T1-E3	RFQ VIEW	PDF RFQ	1,431 In-stock	Vishay Siliconix	MOSFET N-CH 25V 23.1A 8-SOIC		TrenchFET®	Obsolete	Tape & Reel (TR)	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO	3.1W (Ta), 5.6W (Tc)	N-Channel	-	25V	23.1A (Tc)	5.8 mOhm @ 15A, 10V	2.2V @ 250µA	45nC @ 10V	2410pF @ 15V	4.5V, 10V	±16V
	SI4660DY-T1-GE3	RFQ VIEW	PDF RFQ	779 In-stock	Vishay Siliconix	MOSFET N-CH 25V 23.1A 8-SOIC		TrenchFET®	Obsolete	Digi-Reel®	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO	3.1W (Ta), 5.6W (Tc)	N-Channel	-	25V	23.1A (Tc)	5.8 mOhm @ 15A, 10V	2.2V @ 250µA	45nC @ 10V	2410pF @ 15V	4.5V, 10V	±16V
	SI4660DY-T1-GE3	RFQ VIEW	PDF RFQ	3,782 In-stock	Vishay Siliconix	MOSFET N-CH 25V 23.1A 8-SOIC		TrenchFET®	Obsolete	Cut Tape (CT)	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO	3.1W (Ta), 5.6W (Tc)	N-Channel	-	25V	23.1A (Tc)	5.8 mOhm @ 15A, 10V	2.2V @ 250µA	45nC @ 10V	2410pF @ 15V	4.5V, 10V	±16V
	SI4660DY-T1-GE3	RFQ VIEW	PDF RFQ	2,264 In-stock	Vishay Siliconix	MOSFET N-CH 25V 23.1A 8-SOIC		TrenchFET®	Obsolete	Tape & Reel (TR)	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO	3.1W (Ta), 5.6W (Tc)	N-Channel	-	25V	23.1A (Tc)	5.8 mOhm @ 15A, 10V	2.2V @ 250µA	45nC @ 10V	2410pF @ 15V	4.5V, 10V	±16V

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