Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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FDMS8660S
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3,272
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ON Semiconductor MOSFET N-CH 30V 25A POWER56 PowerTrench® Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-PQFN (5x6) 2.5W (Ta), 83W (Tc) N-Channel - 30V 25A (Ta), 40A (Tc) 2.4 mOhm @ 25A, 10V 2V @ 250µA 113nC @ 10V 4345pF @ 15V 4.5V, 10V ±20V
FDMS8660S
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RFQ
3,311
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ON Semiconductor MOSFET N-CH 30V 25A POWER56 PowerTrench® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-PQFN (5x6) 2.5W (Ta), 83W (Tc) N-Channel - 30V 25A (Ta), 40A (Tc) 2.4 mOhm @ 25A, 10V 2V @ 250µA 113nC @ 10V 4345pF @ 15V 4.5V, 10V ±20V
FDMS8660S
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RFQ
1,116
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ON Semiconductor MOSFET N-CH 30V 25A POWER56 PowerTrench® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-PQFN (5x6) 2.5W (Ta), 83W (Tc) N-Channel - 30V 25A (Ta), 40A (Tc) 2.4 mOhm @ 25A, 10V 2V @ 250µA 113nC @ 10V 4345pF @ 15V 4.5V, 10V ±20V
BSZ0501NSIATMA1
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RFQ
2,416
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Infineon Technologies MOSFET N-CH 30V 25A 8SON OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8-FL 2.1W (Ta), 50W (Tc) N-Channel - 30V 25A (Ta), 40A (Tc) 2 mOhm @ 20A, 10V 2V @ 250µA 33nC @ 10V 2000pF @ 15V 4.5V, 10V ±20V
BSZ0901NSIATMA1
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RFQ
1,005
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Infineon Technologies MOSFET N-CH 30V 40A TSDSON OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8-FL 2.1W (Ta), 69W (Tc) N-Channel Schottky Diode (Body) 30V 25A (Ta), 40A (Tc) 2.1 mOhm @ 20A, 10V 2.2V @ 250µA 41nC @ 10V 2600pF @ 15V 4.5V, 10V ±20V
BSZ0901NSIATMA1
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RFQ
2,039
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Infineon Technologies MOSFET N-CH 30V 40A TSDSON OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8-FL 2.1W (Ta), 69W (Tc) N-Channel Schottky Diode (Body) 30V 25A (Ta), 40A (Tc) 2.1 mOhm @ 20A, 10V 2.2V @ 250µA 41nC @ 10V 2600pF @ 15V 4.5V, 10V ±20V
BSZ0901NSIATMA1
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RFQ
3,750
In-stock
Infineon Technologies MOSFET N-CH 30V 40A TSDSON OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8-FL 2.1W (Ta), 69W (Tc) N-Channel Schottky Diode (Body) 30V 25A (Ta), 40A (Tc) 2.1 mOhm @ 20A, 10V 2.2V @ 250µA 41nC @ 10V 2600pF @ 15V 4.5V, 10V ±20V