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| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,628
In-stock
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Vishay Siliconix | MOSFET N-CHAN 40V POWERPAK 1212- | TrenchFET® Gen IV | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8S | 5W (Ta), 65.7W (Tc) | N-Channel | - | 40V | 37.5A (Ta), 60A (Tc) | 1.98 mOhm @ 10A, 10V | 2.4V @ 250µA | 89nC @ 10V | 4270pF @ 20V | 4.5V, 10V | +20V, -16V | |||
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1,543
In-stock
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Vishay Siliconix | MOSFET N-CHAN 40V POWERPAK 1212- | TrenchFET® Gen IV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8S | 5W (Ta), 65.7W (Tc) | N-Channel | - | 40V | 37.5A (Ta), 60A (Tc) | 1.98 mOhm @ 10A, 10V | 2.4V @ 250µA | 89nC @ 10V | 4270pF @ 20V | 4.5V, 10V | +20V, -16V | |||
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VIEW |
3,762
In-stock
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Vishay Siliconix | MOSFET N-CHAN 40V POWERPAK 1212- | TrenchFET® Gen IV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8S | 5W (Ta), 65.7W (Tc) | N-Channel | - | 40V | 37.5A (Ta), 60A (Tc) | 1.98 mOhm @ 10A, 10V | 2.4V @ 250µA | 89nC @ 10V | 4270pF @ 20V | 4.5V, 10V | +20V, -16V | |||
