Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Infineon Technologies MOSFET N-CH 30V 53A MG-WDSON-2 OptiMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount 3-WDSON MG-WDSON-2, CanPAK M™ 2.2W (Ta), 36W (Tc) N-Channel - 30V 13A (Ta), 53A (Tc) 8.3 mOhm @ 20A, 10V 2.2V @ 250µA 18nC @ 10V 1800pF @ 15V 4.5V, 10V ±20V
BSC080N03MSGATMA1
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1,004
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Infineon Technologies MOSFET N-CH 30V 53A TDSON-8 OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 2.5W (Ta), 35W (Tc) N-Channel - 30V 13A (Ta), 53A (Tc) 8 mOhm @ 30A, 10V 2V @ 250µA 27nC @ 10V 2100pF @ 15V 4.5V, 10V ±20V
BSC080N03MSGATMA1
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2,940
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Infineon Technologies MOSFET N-CH 30V 53A TDSON-8 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 2.5W (Ta), 35W (Tc) N-Channel - 30V 13A (Ta), 53A (Tc) 8 mOhm @ 30A, 10V 2V @ 250µA 27nC @ 10V 2100pF @ 15V 4.5V, 10V ±20V
BSC080N03MSGATMA1
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3,904
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Infineon Technologies MOSFET N-CH 30V 53A TDSON-8 OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 2.5W (Ta), 35W (Tc) N-Channel - 30V 13A (Ta), 53A (Tc) 8 mOhm @ 30A, 10V 2V @ 250µA 27nC @ 10V 2100pF @ 15V 4.5V, 10V ±20V