Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRF6794MTRPBF
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Infineon Technologies MOSFET N-CH 25V DIRECTFET MX HEXFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric MX DIRECTFET™ MX 2.8W (Ta), 100W (Tc) N-Channel Schottky Diode (Body) 25V 32A (Ta), 200A (Tc) 1.7 mOhm @ 32A, 10V 2.35V @ 100µA 47nC @ 4.5V 4420pF @ 13V 4.5V, 10V ±20V
IRF6794MTR1PBF
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Infineon Technologies MOSFET N-CH 25V 32A DIRECTFET-MX HEXFET® Obsolete Digi-Reel® MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric MX DIRECTFET™ MX 2.8W (Ta), 100W (Tc) N-Channel Schottky Diode (Body) 25V 32A (Ta), 200A (Tc) 1.7 mOhm @ 32A, 10V 2.35V @ 100µA 47nC @ 4.5V 4420pF @ 13V 4.5V, 10V ±20V
IRF6794MTR1PBF
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632
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Infineon Technologies MOSFET N-CH 25V 32A DIRECTFET-MX HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric MX DIRECTFET™ MX 2.8W (Ta), 100W (Tc) N-Channel Schottky Diode (Body) 25V 32A (Ta), 200A (Tc) 1.7 mOhm @ 32A, 10V 2.35V @ 100µA 47nC @ 4.5V 4420pF @ 13V 4.5V, 10V ±20V
IRF6794MTR1PBF
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RFQ
2,527
In-stock
Infineon Technologies MOSFET N-CH 25V 32A DIRECTFET-MX HEXFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric MX DIRECTFET™ MX 2.8W (Ta), 100W (Tc) N-Channel Schottky Diode (Body) 25V 32A (Ta), 200A (Tc) 1.7 mOhm @ 32A, 10V 2.35V @ 100µA 47nC @ 4.5V 4420pF @ 13V 4.5V, 10V ±20V