Packaging :
Supplier Device Package :
Drain to Source Voltage (Vdss) :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
Default Photo
RFQ
VIEW
RFQ
2,406
In-stock
Infineon Technologies MOSFET N-CH 60V 3A SAWN ON FOIL OptiMOS™ Active - MOSFET (Metal Oxide) - Surface Mount Die Sawn on foil - N-Channel - 60V 3A (Tj) 100 mOhm @ 2A, 10V 2.2V @ 196µA - - 10V -
Default Photo
RFQ
VIEW
RFQ
3,006
In-stock
Infineon Technologies MOSFET N-CH 60V 3A SAWN ON FOIL OptiMOS™ Active Bulk MOSFET (Metal Oxide) - Surface Mount Die Sawn on foil - N-Channel - 60V 3A (Tj) 100 mOhm @ 2A, 10V 4V @ 196µA - - 10V -
IXTA3N100D2HV
RFQ
VIEW
RFQ
1,362
In-stock
IXYS MOSFET N-CH - Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263HV 125W (Tc) N-Channel Depletion Mode 1000V 3A (Tj) 6 Ohm @ 1.5A, 0V 4.5V @ 250µA 37.5nC @ 5V 1020pF @ 25V 0V ±20V