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| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,874
In-stock
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Vishay Siliconix | MOSFET N-CH 40V 29A D2PAK | TrenchFET® | Last Time Buy | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | 3.13W (Ta), 312W (Tc) | N-Channel | - | 40V | 29A (Ta), 110A (Tc) | 2.1 mOhm @ 30A, 10V | 2.5V @ 250µA | 360nC @ 10V | 18800pF @ 20V | 4.5V, 10V | ±20V | |||
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VIEW |
1,378
In-stock
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Vishay Siliconix | MOSFET N-CH 40V 29A D2PAK | TrenchFET® | Last Time Buy | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | 3.13W (Ta), 312W (Tc) | N-Channel | - | 40V | 29A (Ta), 110A (Tc) | 2.1 mOhm @ 30A, 10V | 2.5V @ 250µA | 360nC @ 10V | 18800pF @ 20V | 4.5V, 10V | ±20V | |||
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VIEW |
1,725
In-stock
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Vishay Siliconix | MOSFET N-CH 40V 29A D2PAK | TrenchFET® | Last Time Buy | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | 3.13W (Ta), 312W (Tc) | N-Channel | - | 40V | 29A (Ta), 110A (Tc) | 2.1 mOhm @ 30A, 10V | 2.5V @ 250µA | 360nC @ 10V | 18800pF @ 20V | 4.5V, 10V | ±20V | |||
