Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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BSC118N10NSGATMA1
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Infineon Technologies MOSFET N-CH 100V 71A TDSON-8 OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 114W (Tc) N-Channel - 100V 11A (Ta), 71A (Tc) 11.8 mOhm @ 50A, 10V 4V @ 70µA 56nC @ 10V 3700pF @ 50V 10V ±20V
BSC118N10NSGATMA1
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2,435
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Infineon Technologies MOSFET N-CH 100V 71A TDSON-8 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 114W (Tc) N-Channel - 100V 11A (Ta), 71A (Tc) 11.8 mOhm @ 50A, 10V 4V @ 70µA 56nC @ 10V 3700pF @ 50V 10V ±20V
BSC118N10NSGATMA1
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1,836
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Infineon Technologies MOSFET N-CH 100V 71A TDSON-8 OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 114W (Tc) N-Channel - 100V 11A (Ta), 71A (Tc) 11.8 mOhm @ 50A, 10V 4V @ 70µA 56nC @ 10V 3700pF @ 50V 10V ±20V