Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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AOWF240
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Alpha & Omega Semiconductor Inc. MOSFET N-CH 40V 21A TO262F - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Full Pack, I²Pak - 2.1W (Ta), 33.3W (Tc) N-Channel - 40V 21A (Ta), 83A (Tc) 2.6 mOhm @ 20A, 10V 2.2V @ 250µA 72nC @ 10V 3510pF @ 20V 4.5V, 10V ±20V
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2,573
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Infineon Technologies MOSFET N CH 30V 21A PQFN5X6 HEXFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-TQFN Exposed Pad PQFN (5x6) 3.4W (Ta), 54W (Tc) N-Channel - 30V 21A (Ta), 83A (Tc) 4.9 mOhm @ 20A, 10V 2V @ 50µA 59nC @ 10V 2600pF @ 10V 4.5V, 10V ±20V
IRFH8321TRPBF
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3,524
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Infineon Technologies MOSFET N CH 30V 21A PQFN5X6 HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-TQFN Exposed Pad PQFN (5x6) 3.4W (Ta), 54W (Tc) N-Channel - 30V 21A (Ta), 83A (Tc) 4.9 mOhm @ 20A, 10V 2V @ 50µA 59nC @ 10V 2600pF @ 10V 4.5V, 10V ±20V
IRFH8321TRPBF
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3,154
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Infineon Technologies MOSFET N CH 30V 21A PQFN5X6 HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-TQFN Exposed Pad PQFN (5x6) 3.4W (Ta), 54W (Tc) N-Channel - 30V 21A (Ta), 83A (Tc) 4.9 mOhm @ 20A, 10V 2V @ 50µA 59nC @ 10V 2600pF @ 10V 4.5V, 10V ±20V