Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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AOTF2610L
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Alpha & Omega Semiconductor Inc. MOSFET N-CH 60V 35A TO220F - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack TO-220-3F 2.1W (Ta), 31W (Tc) N-Channel - 60V 9A (Ta), 35A (Tc) 10.7 mOhm @ 20A, 10V 2.5V @ 250µA 30nC @ 10V 2007pF @ 30V 4.5V, 10V ±20V
BSZ130N03MSGATMA1
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1,736
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Infineon Technologies MOSFET N-CH 30V 35A TSDSON-8 OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8 2.1W (Ta), 25W (Tc) N-Channel - 30V 9A (Ta), 35A (Tc) 11.5 mOhm @ 20A, 10V 2V @ 250µA 17nC @ 10V 1300pF @ 15V 4.5V, 10V ±20V
BSZ130N03MSGATMA1
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1,348
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Infineon Technologies MOSFET N-CH 30V 35A TSDSON-8 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8 2.1W (Ta), 25W (Tc) N-Channel - 30V 9A (Ta), 35A (Tc) 11.5 mOhm @ 20A, 10V 2V @ 250µA 17nC @ 10V 1300pF @ 15V 4.5V, 10V ±20V
BSZ130N03MSGATMA1
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883
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Infineon Technologies MOSFET N-CH 30V 35A TSDSON-8 OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8 2.1W (Ta), 25W (Tc) N-Channel - 30V 9A (Ta), 35A (Tc) 11.5 mOhm @ 20A, 10V 2V @ 250µA 17nC @ 10V 1300pF @ 15V 4.5V, 10V ±20V