- Manufacture :
- Series :
- Part Status :
- Packaging :
- Operating Temperature :
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- Package / Case :
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- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
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6 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
2,006
In-stock
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ON Semiconductor | MOSFET N-CH 500V 9.6A | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F-3FS | 2W (Ta), 37W (Tc) | N-Channel | - | 500V | 9.6A (Tc) | 520 mOhm @ 7A, 10V | - | 38.4nC @ 10V | 1000pF @ 30V | 10V | ±30V | |||
|
VIEW |
2,518
In-stock
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ON Semiconductor | MOSFET N-CH 500V 9.6A TO-3P | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P | 160W (Tc) | N-Channel | - | 500V | 9.6A (Tc) | 730 mOhm @ 4.8A, 10V | 5V @ 250µA | 36nC @ 10V | 1450pF @ 25V | 10V | ±30V | |||
|
VIEW |
3,943
In-stock
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ON Semiconductor | MOSFET N-CH 500V 9.6A TO-3PF | - | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | SC-94 | TO-3PF | 96W (Tc) | N-Channel | - | 500V | 9.6A (Tc) | 390 mOhm @ 4.8A, 10V | 4V @ 250µA | 113nC @ 10V | 3800pF @ 25V | 10V | ±30V | |||
|
VIEW |
2,644
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 80V 9.6A 8TSON | U-MOSVIII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 27W (Tc) | N-Channel | - | 80V | 9.6A (Tc) | 30 mOhm @ 4.8A, 10V | 4V @ 100µA | 11nC @ 10V | 920pF @ 40V | 10V | ±20V | |||
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|
VIEW |
2,125
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 80V 9.6A 8TSON | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 27W (Tc) | N-Channel | - | 80V | 9.6A (Tc) | 30 mOhm @ 4.8A, 10V | 4V @ 100µA | 11nC @ 10V | 920pF @ 40V | 10V | ±20V | |||
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|
VIEW |
991
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 80V 9.6A 8TSON | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 27W (Tc) | N-Channel | - | 80V | 9.6A (Tc) | 30 mOhm @ 4.8A, 10V | 4V @ 100µA | 11nC @ 10V | 920pF @ 40V | 10V | ±20V | |||
