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11 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
1,723
In-stock
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Vishay Siliconix | MOSFET P-CH 12V 9.9A PPAK 1212-8 | TrenchFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 | 1.5W (Ta) | P-Channel | - | 12V | 9.9A (Ta) | 12 mOhm @ 15.6A, 4.5V | 1V @ 400µA | 59nC @ 4.5V | - | 1.8V, 4.5V | ±8V | |||
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|
VIEW |
2,764
In-stock
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Vishay Siliconix | MOSFET P-CH 12V 9.9A PPAK 1212-8 | TrenchFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 | 1.5W (Ta) | P-Channel | - | 12V | 9.9A (Ta) | 12 mOhm @ 15.6A, 4.5V | 1V @ 400µA | 59nC @ 4.5V | - | 1.8V, 4.5V | ±8V | |||
|
VIEW |
3,842
In-stock
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Diodes Incorporated | MOSFET N-CH 30V 9.9A UDFN2020-6 | - | Active | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type F) | 2.1W (Ta) | N-Channel | - | 30V | 9.9A (Ta) | 20.5 mOhm @ 7A, 10V | 2V @ 250µA | 13.2nC @ 10V | 641pF @ 15V | 4.5V, 10V | ±20V | |||
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|
VIEW |
1,604
In-stock
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Diodes Incorporated | MOSFET N-CH 30V 9.9A UDFN2020-6 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type F) | 2.1W (Ta) | N-Channel | - | 30V | 9.9A (Ta) | 20.5 mOhm @ 7A, 10V | 2V @ 250µA | 13.2nC @ 10V | 641pF @ 15V | 4.5V, 10V | ±20V | |||
|
VIEW |
2,694
In-stock
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Infineon Technologies | MOSFET N-CH 30V 9.9A 8SOIC | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 9.9A (Ta) | 14.6 mOhm @ 9.9A, 4.5V | 1.1V @ 10µA | 11nC @ 4.5V | 1025pF @ 25V | 2.5V, 4.5V | ±12V | |||
|
VIEW |
1,445
In-stock
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Diodes Incorporated | MOSFET P-CH 30V 9.9A 8-SO | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -50°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 1.45W (Ta) | P-Channel | - | 30V | 9.9A (Ta) | 11 mOhm @ 12A, 20V | 3V @ 250µA | 20.5nC @ 10V | 2246pF @ 15V | 6V, 10V | ±25V | |||
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|
VIEW |
1,779
In-stock
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Diodes Incorporated | MOSFET P-CH 30V 9.9A 8-SO | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -50°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 1.45W (Ta) | P-Channel | - | 30V | 9.9A (Ta) | 11 mOhm @ 12A, 20V | 3V @ 250µA | 20.5nC @ 10V | 2246pF @ 15V | 6V, 10V | ±25V | |||
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|
VIEW |
1,108
In-stock
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Diodes Incorporated | MOSFET P-CH 30V 9.9A 8-SO | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -50°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 1.45W (Ta) | P-Channel | - | 30V | 9.9A (Ta) | 11 mOhm @ 12A, 20V | 3V @ 250µA | 20.5nC @ 10V | 2246pF @ 15V | 6V, 10V | ±25V | |||
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|
VIEW |
2,056
In-stock
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Infineon Technologies | MOSFET N-CH 30V 9.9A 8SOIC | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 9.9A (Ta) | 14.6 mOhm @ 9.9A, 4.5V | 1.1V @ 10µA | 11nC @ 4.5V | 1025pF @ 25V | 2.5V, 4.5V | ±12V | |||
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|
VIEW |
3,349
In-stock
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Infineon Technologies | MOSFET N-CH 30V 9.9A 8SOIC | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 9.9A (Ta) | 14.6 mOhm @ 9.9A, 4.5V | 1.1V @ 10µA | 11nC @ 4.5V | 1025pF @ 25V | 2.5V, 4.5V | ±12V | |||
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|
VIEW |
1,753
In-stock
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Infineon Technologies | MOSFET N-CH 30V 9.9A 8SOIC | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 9.9A (Ta) | 14.6 mOhm @ 9.9A, 4.5V | 1.1V @ 10µA | 11nC @ 4.5V | 1025pF @ 25V | 2.5V, 4.5V | ±12V | |||
