- Manufacture :
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- Operating Temperature :
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- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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5 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
835
In-stock
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Vishay Siliconix | MOSFET P-CH 30V 17.3A 8-SO | TrenchFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 3.1W (Ta), 6.9W (Tc) | P-Channel | - | 30V | 17.3A (Ta) | 6.5 mOhm @ 13A, 10V | 2.8V @ 250µA | 153nC @ 10V | 4620pF @ 15V | 4.5V, 10V | ±25V | |||
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VIEW |
3,917
In-stock
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Vishay Siliconix | MOSFET P-CH 30V 17.3A 8-SO | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 3.1W (Ta), 6.9W (Tc) | P-Channel | - | 30V | 17.3A (Ta) | 6.5 mOhm @ 13A, 10V | 2.8V @ 250µA | 153nC @ 10V | 4620pF @ 15V | 4.5V, 10V | ±25V | |||
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VIEW |
2,539
In-stock
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Vishay Siliconix | MOSFET P-CH 30V 17.3A 8-SO | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 3.1W (Ta), 6.9W (Tc) | P-Channel | - | 30V | 17.3A (Ta) | 6.5 mOhm @ 13A, 10V | 2.8V @ 250µA | 153nC @ 10V | 4620pF @ 15V | 4.5V, 10V | ±25V | |||
|
VIEW |
2,337
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 650V 17.3A TO-220AB | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 165W (Tc) | N-Channel | - | 650V | 17.3A (Ta) | 200 mOhm @ 8.7A, 10V | 3.5V @ 900µA | 45nC @ 10V | 1800pF @ 300V | 10V | ±30V | |||
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VIEW |
2,536
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 650V 17.3A T0247 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 165W (Tc) | N-Channel | - | 650V | 17.3A (Ta) | 200 mOhm @ 8.7A, 10V | 3.5V @ 900µA | 45nC @ 10V | 1800pF @ 300V | 10V | ±30V | |||
