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- Operating Temperature :
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- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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13 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
2,829
In-stock
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Infineon Technologies | MOSFET N-CH 30V 11.1A 8-SOIC | OptiMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 11.1A (Ta) | 13 mOhm @ 11.1A, 10V | 2V @ 42µA | 21nC @ 5V | 1280pF @ 25V | 4.5V, 10V | ±20V | |||
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|
VIEW |
1,351
In-stock
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Infineon Technologies | MOSFET N-CH 30V 11.1A 8-SOIC | OptiMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 11.1A (Ta) | 13 mOhm @ 11.1A, 10V | 2V @ 42µA | 21nC @ 5V | 1280pF @ 25V | 4.5V, 10V | ±20V | |||
|
VIEW |
2,668
In-stock
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Diodes Incorporated | MOSFET P-CH 20V 11.1A UDFN2020-6 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type E) | 1.9W (Ta) | P-Channel | - | 20V | 11.1A (Ta) | 16 mOhm @ 7A, 4.5V | 1V @ 250µA | 59nC @ 8V | 2760pF @ 15V | 1.5V, 4.5V | ±10V | |||
|
VIEW |
2,199
In-stock
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ON Semiconductor | MOSFET N-CH 30V 11.1A 8-SOIC | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 910mW (Ta) | N-Channel | - | 30V | 11.1A (Ta) | 4 mOhm @ 18A, 10V | 2.5V @ 250µA | 36nC @ 4.5V | 5300pF @ 25V | 4.5V, 10V | ±20V | |||
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|
VIEW |
3,647
In-stock
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Infineon Technologies | MOSFET N-CH 30V 11.1A 8-SOIC | OptiMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 11.1A (Ta) | 13 mOhm @ 11.1A, 10V | 2V @ 42µA | 21nC @ 5V | 1280pF @ 25V | 4.5V, 10V | ±20V | |||
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|
VIEW |
3,690
In-stock
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Infineon Technologies | MOSFET N-CH 30V 11.1A 8-SOIC | OptiMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 11.1A (Ta) | 13 mOhm @ 11.1A, 10V | 2V @ 42µA | 21nC @ 5V | 1280pF @ 25V | 4.5V, 10V | ±20V | |||
|
VIEW |
1,870
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 650V 11.1A TO-220 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 650V | 11.1A (Ta) | 390 mOhm @ 5.5A, 10V | 3.5V @ 450µA | 25nC @ 10V | 890pF @ 300V | 10V | ±30V | |||
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|
VIEW |
3,993
In-stock
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Diodes Incorporated | MOSFET P-CH 20V 11.1A UDFN2020-6 | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type E) | 1.9W (Ta) | P-Channel | - | 20V | 11.1A (Ta) | 16 mOhm @ 7A, 4.5V | 1V @ 250µA | 59nC @ 8V | 2760pF @ 15V | 1.5V, 4.5V | ±10V | |||
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|
VIEW |
3,952
In-stock
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Diodes Incorporated | MOSFET P-CH 20V 11.1A UDFN2020-6 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type E) | 1.9W (Ta) | P-Channel | - | 20V | 11.1A (Ta) | 16 mOhm @ 7A, 4.5V | 1V @ 250µA | 59nC @ 8V | 2760pF @ 15V | 1.5V, 4.5V | ±10V | |||
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|
VIEW |
2,789
In-stock
|
Diodes Incorporated | MOSFET P-CH 20V 11.1A UDFN2020-6 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type E) | 1.9W (Ta) | P-Channel | - | 20V | 11.1A (Ta) | 16 mOhm @ 7A, 4.5V | 1V @ 250µA | 59nC @ 8V | 2760pF @ 15V | 1.5V, 4.5V | ±10V | |||
|
VIEW |
2,104
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 650V 11.1A DPAK-0S | DTMOSIV | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 100W (Tc) | N-Channel | - | 650V | 11.1A (Ta) | 440 mOhm @ 5.5A, 10V | 3.5V @ 450µA | 25nC @ 10V | 890pF @ 300V | 10V | ±30V | |||
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|
VIEW |
1,673
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 650V 11.1A DPAK-0S | DTMOSIV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 100W (Tc) | N-Channel | - | 650V | 11.1A (Ta) | 440 mOhm @ 5.5A, 10V | 3.5V @ 450µA | 25nC @ 10V | 890pF @ 300V | 10V | ±30V | |||
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|
VIEW |
1,188
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 650V 11.1A DPAK-0S | DTMOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 100W (Tc) | N-Channel | - | 650V | 11.1A (Ta) | 440 mOhm @ 5.5A, 10V | 3.5V @ 450µA | 25nC @ 10V | 890pF @ 300V | 10V | ±30V | |||
