Drain to Source Voltage (Vdss) :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Diodes Incorporated MOSFET N-CH 100V 108A TO220AB Automotive, AEC-Q101 Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 2.4W (Ta), 166W (Tc) N-Channel - 100V 108A (Tc) 9.5 mOhm @ 13A, 10V 3.5V @ 250µA 53.7nC @ 10V 2592pF @ 50V 10V ±20V
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Diodes Incorporated MOSFET 100V 108A TO220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 2.4W (Ta), 166W (Tc) N-Channel - 100V 108A (Tc) 9.5 mOhm @ 13A, 10V 3.5V @ 250µA 53.7nC @ 10V 2592pF @ 50V 10V ±20V
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IXYS MOSFET N-CH 650V 108A SOT-227 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227B 890W (Tc) N-Channel - 650V 108A (Tc) 24 mOhm @ 54A, 10V 5.5V @ 8mA 225nC @ 10V 15500pF @ 25V 10V ±30V
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IXYS MOSFET N-CH 300V 108A TO-264 HiPerFET™, Polar3™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole ISOPLUS264™ ISOPLUS264™ 520W (Tc) N-Channel - 300V 108A (Tc) 16 mOhm @ 105A, 10V 5V @ 8mA 268nC @ 10V 16200pF @ 25V 10V ±20V
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Taiwan Semiconductor Corporation MOSFET N-CH 30V 108A 8PDFN - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-PDFN (5x6) 89W (Tc) N-Channel - 30V 108A (Tc) 4.5 mOhm @ 18A, 10V 2.5V @ 250µA 19nC @ 10V 1194pF @ 15V 4.5V, 10V ±20V
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Taiwan Semiconductor Corporation MOSFET N-CH 30V 108A 8PDFN - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-PDFN (5x6) 89W (Tc) N-Channel - 30V 108A (Tc) 4.5 mOhm @ 18A, 10V 2.5V @ 250µA 19nC @ 10V 1194pF @ 15V 4.5V, 10V ±20V
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Taiwan Semiconductor Corporation MOSFET N-CH 30V 108A 8PDFN - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-PDFN (5x6) 89W (Tc) N-Channel - 30V 108A (Tc) 4.5 mOhm @ 18A, 10V 2.5V @ 250µA 19nC @ 10V 1194pF @ 15V 4.5V, 10V ±20V
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IXYS MOSFET P-CH 100V 108A ISOPLUS247 PolarP™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole ISOPLUS247™ ISOPLUS247™ 312W (Tc) P-Channel - 100V 108A (Tc) 13 mOhm @ 85A, 10V 4V @ 1mA 240nC @ 10V 12600pF @ 25V 10V ±20V