Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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FQN1N50CBU
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1,016
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ON Semiconductor MOSFET N-CH 500V 380MA TO-92 QFET® Obsolete Bulk MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-226-3, TO-92-3 (TO-226AA) TO-92-3 890mW (Ta), 2.08W (Tc) N-Channel - 500V 380mA (Tc) 6 Ohm @ 190mA, 10V 4V @ 250µA 6.4nC @ 10V 195pF @ 25V 10V ±30V
FQN1N50CTA
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RFQ
3,819
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ON Semiconductor MOSFET N-CH 500V 380MA TO-92 QFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) TO-92-3 890mW (Ta), 2.08W (Tc) N-Channel - 500V 380mA (Tc) 6 Ohm @ 190mA, 10V 4V @ 250µA 6.4nC @ 10V 195pF @ 25V 10V ±30V
FQN1N50CTA
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RFQ
2,629
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ON Semiconductor MOSFET N-CH 500V 380MA TO-92 QFET® Active Tape & Box (TB) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) TO-92-3 890mW (Ta), 2.08W (Tc) N-Channel - 500V 380mA (Tc) 6 Ohm @ 190mA, 10V 4V @ 250µA 6.4nC @ 10V 195pF @ 25V 10V ±30V