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- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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17 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
2,434
In-stock
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Infineon Technologies | MOSFET N-CH 30V 21A PQFN | HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VQFN Exposed Pad | PQFN (3x3) | 2.7W (Ta), 37W (Tc) | N-Channel | - | 30V | 21A (Ta), 40A (Tc) | 3.5 mOhm @ 20A, 4.5V | 1.1V @ 50µA | 62nC @ 4.5V | 3170pF @ 25V | 2.5V, 10V | ±12V | |||
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|
VIEW |
3,002
In-stock
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Infineon Technologies | MOSFET N-CH 30V 21A PQFN | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VQFN Exposed Pad | PQFN (3x3) | 2.7W (Ta), 37W (Tc) | N-Channel | - | 30V | 21A (Ta), 40A (Tc) | 3.5 mOhm @ 20A, 4.5V | 1.1V @ 50µA | 62nC @ 4.5V | 3170pF @ 25V | 2.5V, 10V | ±12V | |||
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VIEW |
2,186
In-stock
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Infineon Technologies | MOSFET N-CH 30V 21A PQFN | HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VQFN Exposed Pad | PQFN (3x3) | 2.7W (Ta), 37W (Tc) | N-Channel | - | 30V | 21A (Ta), 40A (Tc) | 3.8 mOhm @ 20A, 10V | 2.35V @ 50µA | 31nC @ 10V | 2155pF @ 25V | 4.5V, 10V | ±20V | |||
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|
VIEW |
2,583
In-stock
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Infineon Technologies | MOSFET N-CH 30V 21A PQFN | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VQFN Exposed Pad | PQFN (3x3) | 2.7W (Ta), 37W (Tc) | N-Channel | - | 30V | 21A (Ta), 40A (Tc) | 3.8 mOhm @ 20A, 10V | 2.35V @ 50µA | 31nC @ 10V | 2155pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
1,002
In-stock
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Infineon Technologies | MOSFET P-CH 30V 21A PQFN | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PQFN (5x6) | 3.1W (Ta) | P-Channel | - | 30V | 21A (Ta), 40A (Tc) | 4.6 mOhm @ 21A, 10V | 2.4V @ 100µA | 58nC @ 4.5V | 5250pF @ 15V | 4.5V, 10V | ±20V | |||
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|
VIEW |
899
In-stock
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Infineon Technologies | MOSFET P-CH 30V 21A PQFN | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PQFN (5x6) | 3.1W (Ta) | P-Channel | - | 30V | 21A (Ta), 40A (Tc) | 4.6 mOhm @ 21A, 10V | 2.4V @ 100µA | 58nC @ 4.5V | 5250pF @ 15V | 4.5V, 10V | ±20V | |||
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VIEW |
1,266
In-stock
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Infineon Technologies | MOSFET P-CH 30V 21A PQFN | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PQFN (5x6) | 3.1W (Ta) | P-Channel | - | 30V | 21A (Ta), 40A (Tc) | 4.6 mOhm @ 21A, 10V | 2.4V @ 100µA | 58nC @ 4.5V | 5250pF @ 15V | 4.5V, 10V | ±20V | |||
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VIEW |
931
In-stock
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Infineon Technologies | MOSFET N-CH 30V 21A PQFN | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VQFN Exposed Pad | PQFN (3x3) | 2.7W (Ta), 37W (Tc) | N-Channel | - | 30V | 21A (Ta), 40A (Tc) | 3.8 mOhm @ 20A, 10V | 2.35V @ 50µA | 31nC @ 10V | 2155pF @ 25V | 4.5V, 10V | ±20V | |||
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|
VIEW |
3,774
In-stock
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Infineon Technologies | MOSFET N-CH 30V 21A PQFN | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VQFN Exposed Pad | PQFN (3x3) | 2.7W (Ta), 37W (Tc) | N-Channel | - | 30V | 21A (Ta), 40A (Tc) | 3.8 mOhm @ 20A, 10V | 2.35V @ 50µA | 31nC @ 10V | 2155pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
1,727
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 21A PQFN | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VQFN Exposed Pad | PQFN (3x3) | 2.7W (Ta), 37W (Tc) | N-Channel | - | 30V | 21A (Ta), 40A (Tc) | 3.8 mOhm @ 20A, 10V | 2.35V @ 50µA | 31nC @ 10V | 2155pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
1,231
In-stock
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Infineon Technologies | MOSFET N-CH 40V 21A 8TSDSON | OptiMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TSDSON-8-FL | 2.1W (Ta), 63W (Tc) | N-Channel | - | 40V | 21A (Ta), 40A (Tc) | 2.8 mOhm @ 20A, 10V | - | 32nC @ 10V | 2300pF @ 20V | 4.5V, 10V | ±20V | |||
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VIEW |
2,928
In-stock
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Infineon Technologies | MOSFET N-CH 30V 21A TSDSON-8 | OptiMOS™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TSDSON-8-FL | 2.5W (Ta), 48W (Tc) | N-Channel | - | 30V | 21A (Ta), 40A (Tc) | 2.8 mOhm @ 30A, 10V | 2V @ 250µA | 24nC @ 10V | 1500pF @ 15V | 4.5V, 10V | ±20V | |||
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VIEW |
3,146
In-stock
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Infineon Technologies | MOSFET N-CH 30V 21A TSDSON-8 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TSDSON-8-FL | 2.5W (Ta), 48W (Tc) | N-Channel | - | 30V | 21A (Ta), 40A (Tc) | 2.8 mOhm @ 30A, 10V | 2V @ 250µA | 24nC @ 10V | 1500pF @ 15V | 4.5V, 10V | ±20V | |||
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VIEW |
627
In-stock
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Infineon Technologies | MOSFET N-CH 30V 21A TSDSON-8 | OptiMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TSDSON-8-FL | 2.5W (Ta), 48W (Tc) | N-Channel | - | 30V | 21A (Ta), 40A (Tc) | 2.8 mOhm @ 30A, 10V | 2V @ 250µA | 24nC @ 10V | 1500pF @ 15V | 4.5V, 10V | ±20V | |||
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|
VIEW |
2,990
In-stock
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Infineon Technologies | MOSFET N-CH 30V 21A PQFN | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VQFN Exposed Pad | - | 2.7W (Ta), 37W (Tc) | N-Channel | - | 30V | 21A (Ta), 40A (Tc) | 3.5 mOhm @ 20A, 4.5V | 1.1V @ 50µA | 62nC @ 4.5V | 3170pF @ 25V | 2.5V, 10V | ±12V | |||
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|
VIEW |
3,371
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 21A PQFN | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VQFN Exposed Pad | - | 2.7W (Ta), 37W (Tc) | N-Channel | - | 30V | 21A (Ta), 40A (Tc) | 3.5 mOhm @ 20A, 4.5V | 1.1V @ 50µA | 62nC @ 4.5V | 3170pF @ 25V | 2.5V, 10V | ±12V | |||
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|
VIEW |
1,670
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 21A PQFN | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VQFN Exposed Pad | PQFN (3x3) | 2.7W (Ta), 37W (Tc) | N-Channel | - | 30V | 21A (Ta), 40A (Tc) | 3.5 mOhm @ 20A, 4.5V | 1.1V @ 50µA | 62nC @ 4.5V | 3170pF @ 25V | 2.5V, 10V | ±12V | |||
