Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
NTHD4N02FT1G
RFQ
VIEW
RFQ
3,662
In-stock
ON Semiconductor MOSFET N-CH 20V 2.9A CHIPFET - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SMD, Flat Lead ChipFET™ 910mW (Tj) N-Channel Schottky Diode (Isolated) 20V 2.9A (Tj) 80 mOhm @ 2.9A, 4.5V 1.2V @ 250µA 4nC @ 4.5V 300pF @ 10V 2.5V, 4.5V ±12V
NTHD4N02FT1
RFQ
VIEW
RFQ
3,943
In-stock
ON Semiconductor MOSFET N-CH 20V 2.9A CHIPFET - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SMD, Flat Lead ChipFET™ 910mW (Tj) N-Channel Schottky Diode (Isolated) 20V 2.9A (Tj) 80 mOhm @ 2.9A, 4.5V 1.2V @ 250µA 4nC @ 4.5V 300pF @ 10V 2.5V, 4.5V ±12V
Default Photo
RFQ
VIEW
RFQ
1,944
In-stock
Infineon Technologies MOSFET N-CH 60V 2.9A SOT223 SIPMOS® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 1.8W (Ta) N-Channel - 60V 2.9A (Tj) 120 mOhm @ 2.9A, 10V 4V @ 20µA 9.3nC @ 7V 340pF @ 25V 10V ±20V
BSP320SH6327XTSA1
RFQ
VIEW
RFQ
1,015
In-stock
Infineon Technologies MOSFET N-CH 60V 2.9A SOT223 SIPMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel - 60V 2.9A (Tj) 120 mOhm @ 2.9A, 10V 4V @ 20µA 12nC @ 10V 340pF @ 25V 10V ±20V
BSP320SH6327XTSA1
RFQ
VIEW
RFQ
699
In-stock
Infineon Technologies MOSFET N-CH 60V 2.9A SOT223 SIPMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel - 60V 2.9A (Tj) 120 mOhm @ 2.9A, 10V 4V @ 20µA 12nC @ 10V 340pF @ 25V 10V ±20V
BSP320SH6327XTSA1
RFQ
VIEW
RFQ
3,767
In-stock
Infineon Technologies MOSFET N-CH 60V 2.9A SOT223 SIPMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel - 60V 2.9A (Tj) 120 mOhm @ 2.9A, 10V 4V @ 20µA 12nC @ 10V 340pF @ 25V 10V ±20V
SI2302DDS-T1-GE3
RFQ
VIEW
RFQ
3,652
In-stock
Vishay Siliconix MOSFET N-CHAN 20V SOT23 TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 710mW (Ta) N-Channel - 20V 2.9A (Tj) 57 mOhm @ 3.6A, 4.5V 850mV @ 250µA 5.5nC @ 4.5V - 2.5V, 4.5V ±8V
SI2302DDS-T1-GE3
RFQ
VIEW
RFQ
3,708
In-stock
Vishay Siliconix MOSFET N-CHAN 20V SOT23 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 710mW (Ta) N-Channel - 20V 2.9A (Tj) 57 mOhm @ 3.6A, 4.5V 850mV @ 250µA 5.5nC @ 4.5V - 2.5V, 4.5V ±8V
SI2302DDS-T1-GE3
RFQ
VIEW
RFQ
1,364
In-stock
Vishay Siliconix MOSFET N-CHAN 20V SOT23 TrenchFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 710mW (Ta) N-Channel - 20V 2.9A (Tj) 57 mOhm @ 3.6A, 4.5V 850mV @ 250µA 5.5nC @ 4.5V - 2.5V, 4.5V ±8V