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- Vgs(th) (Max) @ Id :
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27 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
973
In-stock
|
IXYS | MOSFET N-CH 170V 260A PLUS247 | GigaMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | PLUS247™-3 | 1670W (Tc) | N-Channel | - | 170V | 260A (Tc) | 6.5 mOhm @ 60A, 10V | 5V @ 8mA | 400nC @ 10V | 24000pF @ 25V | 10V | ±20V | |||
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VIEW |
2,950
In-stock
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IXYS | MOSFET N-CH 170V 260A TO-264 | GigaMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-264-3, TO-264AA | TO-264AA (IXFK) | 1670W (Tc) | N-Channel | - | 170V | 260A (Tc) | 6.5 mOhm @ 60A, 10V | 5V @ 8mA | 400nC @ 10V | 24000pF @ 25V | 10V | ±20V | |||
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|
VIEW |
2,781
In-stock
|
IXYS | MOSFET N-CH 55V 260A TO-247 | TrenchT2™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247 (IXTH) | 480W (Tc) | N-Channel | - | 55V | 260A (Tc) | 3.3 mOhm @ 50A, 10V | 4V @ 250µA | 140nC @ 10V | 10800pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,821
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 260A SUPER D2PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | - | Surface Mount | SUPER D2-PAK | SUPER D2-PAK | 3.8W (Ta), 300W (Tc) | N-Channel | - | 30V | 260A (Tc) | 2.5 mOhm @ 76A, 10V | 4V @ 250µA | 209nC @ 10V | 8250pF @ 25V | 7V, 10V | ±20V | |||
|
VIEW |
1,545
In-stock
|
IXYS | MOSFET N-CH 55V 260A TO-263 | TrenchT2™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | TO-263-7 (IXTA..7) | 480W (Tc) | N-Channel | - | 55V | 260A (Tc) | 3.3 mOhm @ 50A, 10V | 4V @ 250µA | 140nC @ 10V | 10800pF @ 25V | 10V | ±20V | |||
|
VIEW |
696
In-stock
|
IXYS | MOSFET N-CH 55V 260A TO-220 | TrenchT2™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 480W (Tc) | N-Channel | - | 55V | 260A (Tc) | 3.3 mOhm @ 50A, 10V | 4V @ 250µA | 140nC @ 10V | 10800pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,671
In-stock
|
IXYS | MOSFET N-CH | TrenchT2™ | Active | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 | 480W (Tc) | N-Channel | - | 55V | 260A (Tc) | 3.3 mOhm @ 50A, 10V | 4V @ 250µA | 140nC @ 10V | 10800pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,192
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 260A D2PAK | HEXFET® | Not For New Designs | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 330W (Tc) | N-Channel | - | 30V | 260A (Tc) | 3 mOhm @ 38A, 10V | 2.5V @ 250µA | 110nC @ 4.5V | 5890pF @ 15V | 4.5V, 10V | ±20V | |||
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|
VIEW |
3,841
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 260A D2PAK | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 330W (Tc) | N-Channel | - | 30V | 260A (Tc) | 3 mOhm @ 38A, 10V | 2.5V @ 250µA | 110nC @ 4.5V | 5890pF @ 15V | 4.5V, 10V | ±20V | |||
|
VIEW |
916
In-stock
|
Infineon Technologies | 100V 260A 1.9MOHM TOLL | OptiMOS™-5 | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerSFN | PG-HSOF-8-1 | 300W (Tc) | N-Channel | - | 100V | 260A (Tc) | 1.9 mOhm @ 100A, 10V | 3.8V @ 210µA | 166nC @ 10V | 11830pF @ 50V | 6V, 10V | ±20V | |||
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|
VIEW |
1,108
In-stock
|
Infineon Technologies | 100V 260A 1.9MOHM TOLL | OptiMOS™-5 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerSFN | PG-HSOF-8-1 | 300W (Tc) | N-Channel | - | 100V | 260A (Tc) | 1.9 mOhm @ 100A, 10V | 3.8V @ 210µA | 166nC @ 10V | 11830pF @ 50V | 6V, 10V | ±20V | |||
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|
VIEW |
3,732
In-stock
|
Infineon Technologies | MOSFET_(75V,120V( | OptiMOS™-5 | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerSFN | PG-HSOF-8-1 | 300W (Tc) | N-Channel | - | 100V | 260A (Tc) | 1.9 mOhm @ 100A, 10V | 3.8V @ 210µA | 166nC @ 10V | 11830pF @ 50V | 6V, 10V | ±20V | |||
|
VIEW |
2,919
In-stock
|
STMicroelectronics | MOSFET N-CH 60V 260A 8PWRFLAT | STripFET™ F7 | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PowerFlat™ (5x6) | 4.8W (Ta), 187W (Tc) | N-Channel | - | 60V | 260A (Tc) | 1.4 mOhm @ 20A, 10V | 4V @ 250µA | 100nC @ 10V | 6600pF @ 25V | 10V | ±20V | |||
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|
VIEW |
3,049
In-stock
|
STMicroelectronics | MOSFET N-CH 60V 260A 8PWRFLAT | STripFET™ F7 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PowerFlat™ (5x6) | 4.8W (Ta), 187W (Tc) | N-Channel | - | 60V | 260A (Tc) | 1.4 mOhm @ 20A, 10V | 4V @ 250µA | 100nC @ 10V | 6600pF @ 25V | 10V | ±20V | |||
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|
VIEW |
3,094
In-stock
|
STMicroelectronics | MOSFET N-CH 60V 260A POWERFLAT | STripFET™ F7 | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PowerFlat™ (5x6) | 4.8W (Ta), 187W (Tc) | N-Channel | - | 60V | 260A (Tc) | 1.4 mOhm @ 20A, 10V | 4V @ 250µA | 100nC @ 10V | 6600pF @ 25V | 10V | ±20V | |||
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|
VIEW |
1,263
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 260A D2PAK | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 330W (Tc) | N-Channel | - | 30V | 260A (Tc) | 3 mOhm @ 38A, 10V | 2.5V @ 250µA | 110nC @ 4.5V | 5890pF @ 15V | 4.5V, 10V | ±20V | |||
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|
VIEW |
3,512
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 260A D2PAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 330W (Tc) | N-Channel | - | 30V | 260A (Tc) | 3 mOhm @ 38A, 10V | 2.5V @ 250µA | 110nC @ 4.5V | 5890pF @ 15V | 4.5V, 10V | ±20V | |||
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|
VIEW |
3,651
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 260A D2PAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 330W (Tc) | N-Channel | - | 30V | 260A (Tc) | 3 mOhm @ 38A, 10V | 2.5V @ 250µA | 110nC @ 4.5V | 5890pF @ 15V | 4.5V, 10V | ±20V | |||
|
VIEW |
2,387
In-stock
|
STMicroelectronics | MOSFET N-CH 30V 260A POWERFLAT | STripFET™ H6 | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PowerFlat™ (5x6) | 166W (Tc) | N-Channel | - | 30V | 260A (Tc) | 1.3 mOhm @ 22.5A, 10V | 1V @ 250µA (Min) | 61.5nC @ 4.5V | 6375pF @ 25V | 4.5V, 10V | ±20V | |||
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|
VIEW |
887
In-stock
|
STMicroelectronics | MOSFET N-CH 30V 260A POWERFLAT | STripFET™ H6 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PowerFlat™ (5x6) | 166W (Tc) | N-Channel | - | 30V | 260A (Tc) | 1.3 mOhm @ 22.5A, 10V | 1V @ 250µA (Min) | 61.5nC @ 4.5V | 6375pF @ 25V | 4.5V, 10V | ±20V | |||
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|
VIEW |
1,763
In-stock
|
STMicroelectronics | MOSFET N-CH 30V 260A POWERFLAT | STripFET™ H6 | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PowerFlat™ (5x6) | 166W (Tc) | N-Channel | - | 30V | 260A (Tc) | 1.3 mOhm @ 22.5A, 10V | 1V @ 250µA (Min) | 61.5nC @ 4.5V | 6375pF @ 25V | 4.5V, 10V | ±20V | |||
|
VIEW |
3,205
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | - | Surface Mount | 8-PowerVDFN | 8-DSOP Advance | 960mW (Ta), 170W (Tc) | N-Channel | - | 60V | 260A (Tc) | - | - | - | - | 4.5V, 10V | ±20V | |||
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|
VIEW |
1,971
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | - | Surface Mount | 8-PowerVDFN | 8-DSOP Advance | 960mW (Ta), 170W (Tc) | N-Channel | - | 60V | 260A (Tc) | - | - | - | - | 4.5V, 10V | ±20V | |||
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|
VIEW |
752
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | - | Surface Mount | 8-PowerVDFN | 8-DSOP Advance | 960mW (Ta), 170W (Tc) | N-Channel | - | 60V | 260A (Tc) | - | - | - | - | 4.5V, 10V | ±20V | |||
|
VIEW |
2,822
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 260A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 330W (Tc) | N-Channel | - | 30V | 260A (Tc) | 3 mOhm @ 38A, 10V | 2.5V @ 250µA | 110nC @ 4.5V | 5890pF @ 15V | 4.5V, 10V | ±20V | |||
|
VIEW |
3,717
In-stock
|
IXYS | MOSFET N-CH 170V 260A SOT227 | GigaMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227B | 1070W (Tc) | N-Channel | - | 170V | 260A (Tc) | 5.2 mOhm @ 60A, 10V | 5V @ 8mA | 640nC @ 10V | 45000pF @ 25V | 10V | ±20V | |||
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|
VIEW |
2,944
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 260A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 230W (Tc) | N-Channel | - | 30V | 260A (Tc) | 1.95 mOhm @ 60A, 10V | 2.35V @ 150µA | 86nC @ 4.5V | 8420pF @ 15V | 4.5V, 10V | ±20V | |||
