- Series :
- Part Status :
- Packaging :
- Technology :
- Operating Temperature :
- Mounting Type :
- Package / Case :
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- Power Dissipation (Max) :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
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16 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
2,745
In-stock
|
ON Semiconductor | MOSFET N-CH 30V 48A TO-220 | PowerTrench® | Obsolete | Tube | MOSFET (Metal Oxide) | -65°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 52W (Tc) | N-Channel | - | 30V | 48A (Ta) | 12 mOhm @ 24A, 10V | 3V @ 250µA | 18nC @ 5V | 1250pF @ 15V | 4.5V, 10V | ±20V | |||
|
VIEW |
793
In-stock
|
ON Semiconductor | MOSFET N-CH 30V 48A D2PAK | PowerTrench® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -65°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | 52W (Tc) | N-Channel | - | 30V | 48A (Ta) | 13 mOhm @ 26A, 10V | 3V @ 250µA | 18nC @ 5V | 1250pF @ 15V | 4.5V, 10V | ±20V | |||
|
VIEW |
964
In-stock
|
EPC | TRANS GAN 100V 48A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 100V | 48A (Ta) | 4 mOhm @ 30A, 5V | 2.5V @ 11mA | 15nC @ 5V | 1530pF @ 50V | 5V | +6V, -4V | |||
|
|
VIEW |
1,506
In-stock
|
EPC | TRANS GAN 100V 48A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 100V | 48A (Ta) | 4 mOhm @ 30A, 5V | 2.5V @ 11mA | 15nC @ 5V | 1530pF @ 50V | 5V | +6V, -4V | |||
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|
VIEW |
3,147
In-stock
|
EPC | TRANS GAN 100V 48A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Tape & Reel (TR) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 100V | 48A (Ta) | 4 mOhm @ 30A, 5V | 2.5V @ 11mA | 15nC @ 5V | 1530pF @ 50V | 5V | +6V, -4V | |||
|
VIEW |
2,305
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 48A 8SOP-ADV | U-MOSVII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 63W (Tc) | N-Channel | - | 30V | 48A (Ta) | 2.2 mOhm @ 24A, 10V | 2.3V @ 1mA | 74nC @ 10V | 6200pF @ 10V | 4.5V, 10V | ±20V | |||
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|
VIEW |
3,445
In-stock
|
ON Semiconductor | MOSFET N-CH 30V 48A TO-220 | PowerTrench® | Obsolete | Tube | MOSFET (Metal Oxide) | -65°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 52W (Tc) | N-Channel | - | 30V | 48A (Ta) | 13 mOhm @ 26A, 10V | 3V @ 250µA | 18nC @ 5V | 1250pF @ 15V | 4.5V, 10V | ±20V | |||
|
VIEW |
1,444
In-stock
|
EPC | TRANS GAN 200V 48A BUMPED DIE | eGaN® | Active | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 140°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 200V | 48A (Ta) | 10 mOhm @ 20A, 5V | 2.5V @ 7mA | 8.8nC @ 5V | 950pF @ 100V | 5V | +6V, -4V | |||
|
|
VIEW |
1,941
In-stock
|
EPC | TRANS GAN 200V 48A BUMPED DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 140°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 200V | 48A (Ta) | 10 mOhm @ 20A, 5V | 2.5V @ 7mA | 8.8nC @ 5V | 950pF @ 100V | 5V | +6V, -4V | |||
|
|
VIEW |
670
In-stock
|
EPC | TRANS GAN 200V 48A BUMPED DIE | eGaN® | Active | Tape & Reel (TR) | GaNFET (Gallium Nitride) | -40°C ~ 140°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 200V | 48A (Ta) | 10 mOhm @ 20A, 5V | 2.5V @ 7mA | 8.8nC @ 5V | 950pF @ 100V | 5V | +6V, -4V | |||
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|
VIEW |
2,889
In-stock
|
EPC | TRANS GAN 100V 48A BUMPED DIE | eGaN® | Active | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 100V | 48A (Ta) | 4 mOhm @ 30A, 5V | 2.5V @ 11mA | 15nC @ 5V | 1530pF @ 50V | 5V | +6V, -4V | |||
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|
VIEW |
1,818
In-stock
|
EPC | TRANS GAN 100V 48A BUMPED DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 100V | 48A (Ta) | 4 mOhm @ 30A, 5V | 2.5V @ 11mA | 15nC @ 5V | 1530pF @ 50V | 5V | +6V, -4V | |||
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|
VIEW |
2,331
In-stock
|
EPC | TRANS GAN 100V 48A BUMPED DIE | eGaN® | Active | Tape & Reel (TR) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 100V | 48A (Ta) | 4 mOhm @ 30A, 5V | 2.5V @ 11mA | 15nC @ 5V | 1530pF @ 50V | 5V | +6V, -4V | |||
|
VIEW |
1,440
In-stock
|
EPC | TRANS GAN 80V 31A BUMPED DIE | eGaN® | Active | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 80V | 48A (Ta) | 3.2 mOhm @ 30A, 5V | 2.5V @ 12mA | 13nC @ 5V | 1410pF @ 40V | 5V | +6V, -4V | |||
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|
VIEW |
2,648
In-stock
|
EPC | TRANS GAN 80V 31A BUMPED DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 80V | 48A (Ta) | 3.2 mOhm @ 30A, 5V | 2.5V @ 12mA | 13nC @ 5V | 1410pF @ 40V | 5V | +6V, -4V | |||
|
|
VIEW |
2,600
In-stock
|
EPC | TRANS GAN 80V 31A BUMPED DIE | eGaN® | Active | Tape & Reel (TR) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 80V | 48A (Ta) | 3.2 mOhm @ 30A, 5V | 2.5V @ 12mA | 13nC @ 5V | 1410pF @ 40V | 5V | +6V, -4V | |||
