- Part Status :
- Packaging :
- Technology :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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26 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||
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VIEW |
3,270
In-stock
|
EPC | TRANS GAN 200V 31A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | 200V | 31A (Ta) | 10 mOhm @ 20A, 5V | 2.5V @ 7mA | 8.5nC @ 5V | 940pF @ 100V | 5V | +6V, -4V | |||
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|
VIEW |
878
In-stock
|
EPC | TRANS GAN 200V 31A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | 200V | 31A (Ta) | 10 mOhm @ 20A, 5V | 2.5V @ 7mA | 8.5nC @ 5V | 940pF @ 100V | 5V | +6V, -4V | |||
|
VIEW |
659
In-stock
|
Vishay Siliconix | MOSFET N-CH 200V 31A D2PAK | - | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | - | N-Channel | 200V | 31A (Ta) | - | - | - | - | - | - | |||
|
VIEW |
675
In-stock
|
ON Semiconductor | MOSFET P-CHANNEL 100V 31A DPAK | Automotive, AEC-Q101 | Active | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 84W (Tc) | P-Channel | 100V | 31A (Ta) | 75 mOhm @ 14A, 10V | 3.5V @ 1mA | 55nC @ 10V | 2850pF @ 20V | 10V | ±20V | |||
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|
VIEW |
3,900
In-stock
|
EPC | TRANS GAN 200V 31A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Tape & Reel (TR) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | 200V | 31A (Ta) | 10 mOhm @ 20A, 5V | 2.5V @ 7mA | 8.5nC @ 5V | 940pF @ 100V | 5V | +6V, -4V | |||
|
VIEW |
2,138
In-stock
|
EPC | TRANS GAN 150V 31A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | 150V | 31A (Ta) | 7 mOhm @ 25A, 5V | 2.5V @ 9mA | 10nC @ 5V | 1140pF @ 75V | 5V | +6V, -4V | |||
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|
VIEW |
1,007
In-stock
|
EPC | TRANS GAN 150V 31A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | 150V | 31A (Ta) | 7 mOhm @ 25A, 5V | 2.5V @ 9mA | 10nC @ 5V | 1140pF @ 75V | 5V | +6V, -4V | |||
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|
VIEW |
1,875
In-stock
|
EPC | TRANS GAN 150V 31A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Tape & Reel (TR) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | 150V | 31A (Ta) | 7 mOhm @ 25A, 5V | 2.5V @ 9mA | 10nC @ 5V | 1140pF @ 75V | 5V | +6V, -4V | |||
|
VIEW |
2,679
In-stock
|
Texas Instruments | MOSFET N-CH 12V 31A 6DSBGA | NexFET™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UFBGA, DSBGA | 6-DSBGA | 1.65W (Ta) | N-Channel | 12V | 31A (Ta) | 20 mOhm @ 1.5A, 4.5V | 1.2V @ 250µA | 4.7nC @ 4.5V | 715pF @ 6V | 2.5V, 4.5V | ±8V | |||
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|
VIEW |
2,551
In-stock
|
Texas Instruments | MOSFET N-CH 12V 31A 6DSBGA | NexFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UFBGA, DSBGA | 6-DSBGA | 1.65W (Ta) | N-Channel | 12V | 31A (Ta) | 20 mOhm @ 1.5A, 4.5V | 1.2V @ 250µA | 4.7nC @ 4.5V | 715pF @ 6V | 2.5V, 4.5V | ±8V | |||
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|
VIEW |
892
In-stock
|
Texas Instruments | MOSFET N-CH 12V 31A 6DSBGA | NexFET™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UFBGA, DSBGA | 6-DSBGA | 1.65W (Ta) | N-Channel | 12V | 31A (Ta) | 20 mOhm @ 1.5A, 4.5V | 1.2V @ 250µA | 4.7nC @ 4.5V | 715pF @ 6V | 2.5V, 4.5V | ±8V | |||
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|
VIEW |
3,999
In-stock
|
EPC | TRANS GAN 150V 7MOHM BUMPED DIE | eGaN® | Active | Digi-Reel® | GaNFET (Gallium Nitride) | - | Surface Mount | Die | Die | - | N-Channel | 150V | 31A (Ta) | 7 mOhm @ 25A, 5V | 2.5V @ 9mA | 10nC @ 5V | 1140pF @ 75V | - | - | |||
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|
VIEW |
1,723
In-stock
|
EPC | TRANS GAN 150V 7MOHM BUMPED DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | - | Surface Mount | Die | Die | - | N-Channel | 150V | 31A (Ta) | 7 mOhm @ 25A, 5V | 2.5V @ 9mA | 10nC @ 5V | 1140pF @ 75V | - | - | |||
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|
VIEW |
1,083
In-stock
|
EPC | TRANS GAN 150V 7MOHM BUMPED DIE | eGaN® | Active | Tape & Reel (TR) | GaNFET (Gallium Nitride) | - | Surface Mount | Die | Die | - | N-Channel | 150V | 31A (Ta) | 7 mOhm @ 25A, 5V | 2.5V @ 9mA | 10nC @ 5V | 1140pF @ 75V | - | - | |||
|
VIEW |
3,446
In-stock
|
EPC | MOSFET NCH 40V 31A DIE | eGaN® | Active | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | 40V | 31A (Ta) | 2.4 mOhm @ 30A, 5V | 2.5V @ 16mA | 18nC @ 5V | 1900pF @ 20V | 5V | +6V, -4V | |||
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|
VIEW |
3,424
In-stock
|
EPC | MOSFET NCH 40V 31A DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | 40V | 31A (Ta) | 2.4 mOhm @ 30A, 5V | 2.5V @ 16mA | 18nC @ 5V | 1900pF @ 20V | 5V | +6V, -4V | |||
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|
VIEW |
3,608
In-stock
|
EPC | MOSFET NCH 40V 31A DIE | eGaN® | Active | Tape & Reel (TR) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | 40V | 31A (Ta) | 2.4 mOhm @ 30A, 5V | 2.5V @ 16mA | 18nC @ 5V | 1900pF @ 20V | 5V | +6V, -4V | |||
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|
VIEW |
3,650
In-stock
|
EPC | MOSFET NCH 40V 31A DIE | eGaN® | Active | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | - | - | - | - | N-Channel | 40V | 31A (Ta) | 2.4 mOhm @ 30A, 5V | 2.5V @ 16mA | 18nC @ 5V | 1900pF @ 20V | - | - | |||
|
|
VIEW |
1,482
In-stock
|
EPC | MOSFET NCH 40V 31A DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | - | - | - | - | N-Channel | 40V | 31A (Ta) | 2.4 mOhm @ 30A, 5V | 2.5V @ 16mA | 18nC @ 5V | 1900pF @ 20V | - | - | |||
|
|
VIEW |
1,086
In-stock
|
EPC | MOSFET NCH 40V 31A DIE | eGaN® | Active | Tape & Reel (TR) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | - | - | - | - | N-Channel | 40V | 31A (Ta) | 2.4 mOhm @ 30A, 5V | 2.5V @ 16mA | 18nC @ 5V | 1900pF @ 20V | - | - | |||
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|
VIEW |
813
In-stock
|
EPC | MOSFET NCH 60V 31A DIE | eGaN® | Active | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | 60V | 31A (Ta) | 2.6 mOhm @ 30A, 5V | 2.5V @ 15mA | 17nC @ 5V | 1800pF @ 300V | 5V | +6V, -4V | |||
|
|
VIEW |
3,487
In-stock
|
EPC | MOSFET NCH 60V 31A DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | 60V | 31A (Ta) | 2.6 mOhm @ 30A, 5V | 2.5V @ 15mA | 17nC @ 5V | 1800pF @ 300V | 5V | +6V, -4V | |||
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|
VIEW |
3,857
In-stock
|
EPC | MOSFET NCH 60V 31A DIE | eGaN® | Active | Tape & Reel (TR) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | 60V | 31A (Ta) | 2.6 mOhm @ 30A, 5V | 2.5V @ 15mA | 17nC @ 5V | 1800pF @ 300V | 5V | +6V, -4V | |||
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|
VIEW |
627
In-stock
|
EPC | MOSFET NCH 60V 31A DIE | eGaN® | Active | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | - | - | - | - | N-Channel | 60V | 31A (Ta) | 2.6 mOhm @ 30A, 5V | 2.5V @ 15mA | 17nC @ 5V | 1800pF @ 300V | - | - | |||
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|
VIEW |
621
In-stock
|
EPC | MOSFET NCH 60V 31A DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | - | - | - | - | N-Channel | 60V | 31A (Ta) | 2.6 mOhm @ 30A, 5V | 2.5V @ 15mA | 17nC @ 5V | 1800pF @ 300V | - | - | |||
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|
VIEW |
1,931
In-stock
|
EPC | MOSFET NCH 60V 31A DIE | eGaN® | Active | Tape & Reel (TR) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | - | - | - | - | N-Channel | 60V | 31A (Ta) | 2.6 mOhm @ 30A, 5V | 2.5V @ 15mA | 17nC @ 5V | 1800pF @ 300V | - | - | |||
