Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Rds On (Max) @ Id, Vgs :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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1,580
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Infineon Technologies MOSFET N CH 200V 3.7A 8-SO HEXFET® Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 200V 3.7A (Ta) 78 mOhm @ 2.2A, 10V 5V @ 100µA 44nC @ 10V 1750pF @ 100V 10V ±20V
BS108ZL1G
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1,271
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ON Semiconductor MOSFET N-CH 200V 0.25A TO-92 - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) TO-92-3 350mW (Ta) N-Channel - 200V 250mA (Ta) 8 Ohm @ 100mA, 2.8V 1.5V @ 1mA - 150pF @ 25V 2V, 2.8V ±20V
BS108ZL1G
RFQ
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2,186
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ON Semiconductor MOSFET N-CH 200V 0.25A TO-92 - Obsolete Tape & Box (TB) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) TO-92-3 350mW (Ta) N-Channel - 200V 250mA (Ta) 8 Ohm @ 100mA, 2.8V 1.5V @ 1mA - 150pF @ 25V 2V, 2.8V ±20V
PHX9NQ20T,127
RFQ
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RFQ
3,438
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NXP USA Inc. MOSFET N-CH 200V 5.2A TO220F TrenchMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab TO-220-3 25W (Tc) N-Channel - 200V 5.2A (Tc) 400 mOhm @ 4.5A, 10V 4V @ 1mA 24nC @ 10V 959pF @ 25V 10V ±20V
PHX18NQ20T,127
RFQ
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RFQ
602
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NXP USA Inc. MOSFET N-CH 200V 8.2A TO220F TrenchMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab TO-220-3 30W (Tc) N-Channel - 200V 8.2A (Tc) 180 mOhm @ 8A, 10V 4V @ 1mA 40nC @ 10V 1850pF @ 25V 10V ±20V
PHX14NQ20T,127
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RFQ
2,563
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NXP USA Inc. MOSFET N-CH 200V 7.6A TO220F TrenchMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab TO-220-3 30W (Tc) N-Channel - 200V 7.6A (Tc) 230 mOhm @ 7A, 10V 4V @ 1mA 38nC @ 10V 1500pF @ 25V 10V ±20V
PSMN040-200W,127
RFQ
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RFQ
2,461
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NXP USA Inc. MOSFET N-CH 200V 50A SOT429 TrenchMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247-3 300W (Tc) N-Channel - 200V 50A (Tc) 40 mOhm @ 25A, 10V 4V @ 1mA 183nC @ 10V 9530pF @ 25V 10V ±20V
PHP14NQ20T,127
RFQ
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RFQ
2,938
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NXP USA Inc. MOSFET N-CH 200V 14A TO220AB TrenchMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 125W (Tc) N-Channel - 200V 14A (Tc) 230 mOhm @ 7A, 10V 4V @ 1mA 38nC @ 10V 1500pF @ 25V 10V ±20V
PHM15NQ20T,518
RFQ
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RFQ
3,182
In-stock
NXP USA Inc. MOSFET N-CH 200V 17.5A 8HVSON TrenchMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-VDFN Exposed Pad 8-HVSON (6x5) 62.5W (Tc) N-Channel - 200V 17.5A (Tc) 85 mOhm @ 15A, 10V 4V @ 1mA 40nC @ 10V 2170pF @ 30V 10V ±20V
PHM12NQ20T,518
RFQ
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RFQ
3,142
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NXP USA Inc. MOSFET N-CH 200V 14.4A 8HVSON TrenchMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-VDFN Exposed Pad 8-HVSON (6x5) 62.5W (Tc) N-Channel - 200V 14.4A (Tc) 130 mOhm @ 12A, 10V 4V @ 1mA 26nC @ 10V 1230pF @ 25V 5V, 10V ±20V
PHK4NQ20T,518
RFQ
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RFQ
1,741
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NXP USA Inc. MOSFET N-CH 200V 4A SOT96-1 TrenchMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 6.25W (Tc) N-Channel - 200V 4A (Tc) 130 mOhm @ 4A, 10V 4V @ 1mA 26nC @ 10V 1230pF @ 25V 5V, 10V ±20V
PHD22NQ20T,118
RFQ
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RFQ
1,459
In-stock
NXP USA Inc. MOSFET N-CH 200V 21.1A DPAK TrenchMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 150W (Tc) N-Channel - 200V 21.1A (Tc) 120 mOhm @ 12A, 10V 4V @ 1mA 30.8nC @ 10V 1380pF @ 25V 10V ±20V
PHD14NQ20T,118
RFQ
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2,493
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NXP USA Inc. MOSFET N-CH 200V 14A DPAK TrenchMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 125W (Tc) N-Channel - 200V 14A (Tc) 230 mOhm @ 7A, 10V 4V @ 1mA 38nC @ 10V 1500pF @ 25V 5V, 10V ±20V
IRFR220,118
RFQ
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RFQ
1,507
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NXP USA Inc. MOSFET N-CH 200V 4.8A DPAK TrenchMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 42W (Tc) N-Channel - 200V 4.8A (Tc) 800 mOhm @ 2.9A, 10V 4V @ 250µA 14nC @ 10V 280pF @ 25V 10V ±20V
BS108/01,126
RFQ
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RFQ
2,751
In-stock
NXP USA Inc. MOSFET N-CH 200V 300MA SOT54 - Obsolete Tape & Box (TB) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) TO-92-3 1W (Ta) N-Channel - 200V 300mA (Ta) 5 Ohm @ 100mA, 2.8V 1.8V @ 1mA - 120pF @ 25V 2.8V ±20V
BS108,126
RFQ
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RFQ
1,415
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NXP USA Inc. MOSFET N-CH 200V 300MA SOT54 - Obsolete Tape & Box (TB) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) TO-92-3 1W (Ta) N-Channel - 200V 300mA (Ta) 5 Ohm @ 100mA, 2.8V 1.8V @ 1mA - 120pF @ 25V 2.8V ±20V
IRF640,127
RFQ
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3,274
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NXP USA Inc. MOSFET N-CH 200V 16A TO220AB TrenchMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 136W (Tc) N-Channel - 200V 16A (Tc) 180 mOhm @ 8A, 10V 4V @ 1mA 63nC @ 10V 1850pF @ 25V 10V ±20V
IRF7492TRPBF
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1,212
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Infineon Technologies MOSFET N-CH 200V 3.7A 8-SOIC HEXFET® Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 200V 3.7A (Ta) 79 mOhm @ 2.2A, 10V 2.5V @ 250µA 59nC @ 10V 1820pF @ 25V 10V ±20V
IRF7492TRPBF
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1,114
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Infineon Technologies MOSFET N-CH 200V 3.7A 8-SOIC HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 200V 3.7A (Ta) 79 mOhm @ 2.2A, 10V 2.5V @ 250µA 59nC @ 10V 1820pF @ 25V 10V ±20V
IRF7492TRPBF
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862
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Infineon Technologies MOSFET N-CH 200V 3.7A 8-SOIC HEXFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 200V 3.7A (Ta) 79 mOhm @ 2.2A, 10V 2.5V @ 250µA 59nC @ 10V 1820pF @ 25V 10V ±20V
IRFSL4020PBF
RFQ
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RFQ
3,437
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Infineon Technologies MOSFET N-CH 200V 18A TO262 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 100W (Tc) N-Channel - 200V 18A (Tc) 105 mOhm @ 11A, 10V 4.9V @ 100µA 29nC @ 10V 1200pF @ 50V 10V ±20V
IRFS4020PBF
RFQ
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2,740
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Infineon Technologies MOSFET N-CH 200V 18A D2PAK - Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 100W (Tc) N-Channel - 200V 18A (Tc) 105 mOhm @ 11A, 10V 4.9V @ 100µA 29nC @ 10V 1200pF @ 50V 10V ±20V
BUZ31H3046XKSA1
RFQ
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RFQ
1,555
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Infineon Technologies MOSFET N-CH 200V 14.5A TO262-3 SIPMOS® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 95W (Tc) N-Channel - 200V 14.5A (Tc) 200 mOhm @ 9A, 5V 4V @ 1mA - 1120pF @ 25V 5V ±20V
EPC2034ENGRT
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3,270
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EPC TRANS GAN 200V 31A BUMPED DIE eGaN® Discontinued at Digi-Key Digi-Reel® GaNFET (Gallium Nitride) -40°C ~ 150°C (TJ) Surface Mount Die Die - N-Channel - 200V 31A (Ta) 10 mOhm @ 20A, 5V 2.5V @ 7mA 8.5nC @ 5V 940pF @ 100V 5V +6V, -4V
EPC2034ENGRT
RFQ
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RFQ
878
In-stock
EPC TRANS GAN 200V 31A BUMPED DIE eGaN® Discontinued at Digi-Key Cut Tape (CT) GaNFET (Gallium Nitride) -40°C ~ 150°C (TJ) Surface Mount Die Die - N-Channel - 200V 31A (Ta) 10 mOhm @ 20A, 5V 2.5V @ 7mA 8.5nC @ 5V 940pF @ 100V 5V +6V, -4V
Default Photo
RFQ
VIEW
RFQ
796
In-stock
IXYS MOSFET N-CH 200V 58A TO268 HiPerFET™ Last Time Buy Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268 (IXFT) 300W (Tc) N-Channel - 200V 58A (Tc) 40 mOhm @ 29A, 10V 4V @ 4mA 140nC @ 10V 3600pF @ 25V 10V ±20V
Default Photo
RFQ
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3,393
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IXYS MOSFET N-CH 200V 72A TO264AA HiPerFET™ Last Time Buy Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA TO-264AA (IXFK) 360W (Tc) N-Channel - 200V 72A (Tc) 35 mOhm @ 36A, 10V 4V @ 4mA 280nC @ 10V 5900pF @ 25V 10V ±20V
Default Photo
RFQ
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1,430
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IXYS MOSFET N-CHANNEL 200V DIE HiPerFET™ Last Time Buy - MOSFET (Metal Oxide) 150°C (TJ) - Die Die - N-Channel - 200V - - - - - - -
IRF6785MTR1PBF
RFQ
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RFQ
3,536
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Infineon Technologies MOSFET N-CH 200V 3.4A DIRECTFET HEXFET® Obsolete Digi-Reel® MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric MZ DIRECTFET™ MZ 2.8W (Ta), 57W (Tc) N-Channel - 200V 3.4A (Ta), 19A (Tc) 100 mOhm @ 4.2A, 10V 5V @ 100µA 36nC @ 10V 1500pF @ 25V 10V ±20V
IRF6785MTR1PBF
RFQ
VIEW
RFQ
882
In-stock
Infineon Technologies MOSFET N-CH 200V 3.4A DIRECTFET HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric MZ DIRECTFET™ MZ 2.8W (Ta), 57W (Tc) N-Channel - 200V 3.4A (Ta), 19A (Tc) 100 mOhm @ 4.2A, 10V 5V @ 100µA 36nC @ 10V 1500pF @ 25V 10V ±20V