Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Mounting Type Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Gate Charge (Qg) (Max) @ Vgs
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Toshiba Semiconductor and Storage MOSFET N-CH 75V 60A TO-220AB - Active Tube MOSFET (Metal Oxide) Through Hole TO-220-3 128W N-Channel 75V 60A 9 mOhm @ 30A, 10V 75nC @ 10V