- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
2 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
1,143
In-stock
|
NXP USA Inc. | MOSFET N-CH 100V 55A TO220F | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | TO-220F | 57.7W (Tc) | N-Channel | - | 100V | 55A (Tc) | 6.8 mOhm @ 15A, 10V | 4V @ 1mA | 121nC @ 10V | 6686pF @ 50V | 10V | ±20V | |||
|
VIEW |
2,291
In-stock
|
NXP USA Inc. | MOSFET N-CH 100V 10.9A SOT533 | TrenchMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 57.7W (Tc) | N-Channel | - | 100V | 10.9A (Tc) | 180 mOhm @ 9A, 10V | 4V @ 1mA | 14.7nC @ 10V | 360pF @ 25V | 10V | ±20V | |||
