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| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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Nexperia USA Inc. | MOSFET N-CH 100V 1.1A TO236AB | TrenchMOS™ | Active | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB | 580mW (Ta) | N-Channel | 100V | 1.1A (Ta) | 385 mOhm @ 1.1A, 10V | 2.7V @ 250µA | 6.8nC @ 10V | 190pF @ 50V | 4.5V, 10V | ±20V | |||
