Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Infineon Technologies DIFFERENTIATED MOSFETS OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 FL 3W (Ta), 188W (Tc) N-Channel - 60V 100A (Tc) 1.45 mOhm @ 50A, 10V 3.3V @ 120µA 104nC @ 10V 8125pF @ 30V 6V, 10V ±20V
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Infineon Technologies DIFFERENTIATED MOSFETS OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 FL 3W (Ta), 188W (Tc) N-Channel - 60V 100A (Tc) 1.45 mOhm @ 50A, 10V 3.3V @ 120µA 104nC @ 10V 8125pF @ 30V 6V, 10V ±20V
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Infineon Technologies DIFFERENTIATED MOSFETS OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 FL 3W (Ta), 188W (Tc) N-Channel - 60V 100A (Tc) 1.45 mOhm @ 50A, 10V 3.3V @ 120µA 104nC @ 10V 8125pF @ 30V 6V, 10V ±20V