Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TK10V60W,LVQ
RFQ
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RFQ
2,144
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Toshiba Semiconductor and Storage MOSFET N-CH 600V 9.7A 5DFN DTMOSIV Discontinued at Digi-Key Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 4-VSFN Exposed Pad 4-DFN-EP (8x8) 88.3W (Tc) N-Channel Super Junction 600V 9.7A (Ta) 380 mOhm @ 4.9A, 10V 3.7V @ 500µA 20nC @ 10V 700pF @ 300V 10V ±30V
TK10V60W,LVQ
RFQ
VIEW
RFQ
3,810
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 600V 9.7A 5DFN DTMOSIV Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 4-VSFN Exposed Pad 4-DFN-EP (8x8) 88.3W (Tc) N-Channel Super Junction 600V 9.7A (Ta) 380 mOhm @ 4.9A, 10V 3.7V @ 500µA 20nC @ 10V 700pF @ 300V 10V ±30V
TK10V60W,LVQ
RFQ
VIEW
RFQ
3,805
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 600V 9.7A 5DFN DTMOSIV Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 4-VSFN Exposed Pad 4-DFN-EP (8x8) 88.3W (Tc) N-Channel Super Junction 600V 9.7A (Ta) 380 mOhm @ 4.9A, 10V 3.7V @ 500µA 20nC @ 10V 700pF @ 300V 10V ±30V