Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
BS7067N06LS3G
RFQ
VIEW
RFQ
2,837
In-stock
Infineon Technologies MOSFET N-CH 60V 20A TSDSON-8 OptiMOS™ Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN PG-TSDSON-8 2.1W (Ta), 78W (Tc) N-Channel - 60V 14A (Ta), 20A (Tc) 6.7 mOhm @ 20A, 10V 2.2V @ 35µA 62nC @ 10V 4800pF @ 30V 4.5V, 10V ±20V
BS7067N06LS3G
RFQ
VIEW
RFQ
2,489
In-stock
Infineon Technologies MOSFET N-CH 60V 20A TSDSON-8 OptiMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN PG-TSDSON-8 2.1W (Ta), 78W (Tc) N-Channel - 60V 14A (Ta), 20A (Tc) 6.7 mOhm @ 20A, 10V 2.2V @ 35µA 62nC @ 10V 4800pF @ 30V 4.5V, 10V ±20V
IRF6898MTR1PBF
RFQ
VIEW
RFQ
3,314
In-stock
Infineon Technologies MOSFET N-CH 25V 35A DIRECTFET HEXFET® Obsolete Digi-Reel® MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric MX DIRECTFET™ MX 2.1W (Ta), 78W (Tc) N-Channel Schottky Diode (Body) 25V 35A (Ta), 213A (Tc) 1.1 mOhm @ 35A, 10V 2.1V @ 100µA 62nC @ 4.5V 5435pF @ 13V 4.5V, 10V ±16V
IRF6898MTR1PBF
RFQ
VIEW
RFQ
631
In-stock
Infineon Technologies MOSFET N-CH 25V 35A DIRECTFET HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric MX DIRECTFET™ MX 2.1W (Ta), 78W (Tc) N-Channel Schottky Diode (Body) 25V 35A (Ta), 213A (Tc) 1.1 mOhm @ 35A, 10V 2.1V @ 100µA 62nC @ 4.5V 5435pF @ 13V 4.5V, 10V ±16V
IRF6898MTR1PBF
RFQ
VIEW
RFQ
742
In-stock
Infineon Technologies MOSFET N-CH 25V 35A DIRECTFET HEXFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric MX DIRECTFET™ MX 2.1W (Ta), 78W (Tc) N-Channel Schottky Diode (Body) 25V 35A (Ta), 213A (Tc) 1.1 mOhm @ 35A, 10V 2.1V @ 100µA 62nC @ 4.5V 5435pF @ 13V 4.5V, 10V ±16V
IRF6898MTRPBF
RFQ
VIEW
RFQ
3,024
In-stock
Infineon Technologies MOSFET N-CH 25V 35A DIRECTFET HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric MX DIRECTFET™ MX 2.1W (Ta), 78W (Tc) N-Channel Schottky Diode (Body) 25V 35A (Ta), 213A (Tc) 1.1 mOhm @ 35A, 10V 2.1V @ 100µA 62nC @ 4.5V 5435pF @ 13V 4.5V, 10V ±16V