Supplier Device Package :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
AUIRFN8405TR
RFQ
VIEW
RFQ
2,170
In-stock
Infineon Technologies MOSFET N-CH 40V 187A AUTO HEXFET® Not For New Designs Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN PQFN (5x6) 3.3W (Ta), 136W (Tc) N-Channel - 40V 95A (Tc) 2 mOhm @ 50A, 10V 3.9V @ 100µA 117nC @ 10V 5142pF @ 25V 10V ±20V
FDMS86255ET150
RFQ
VIEW
RFQ
3,443
In-stock
ON Semiconductor MOSFET N-CH 150V POWER56 PowerTrench® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN Power56 3.3W (Ta), 136W (Tc) N-Channel - 150V 10A (Ta), 63A (Tc) 12.4 mOhm @ 10A, 10V 4V @ 250µA 63nC @ 10V 4480pF @ 75V 6V, 10V ±20V
FDMS86255ET150
RFQ
VIEW
RFQ
3,759
In-stock
ON Semiconductor MOSFET N-CH 150V POWER56 PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN Power56 3.3W (Ta), 136W (Tc) N-Channel - 150V 10A (Ta), 63A (Tc) 12.4 mOhm @ 10A, 10V 4V @ 250µA 63nC @ 10V 4480pF @ 75V 6V, 10V ±20V
FDMS86255ET150
RFQ
VIEW
RFQ
1,816
In-stock
ON Semiconductor MOSFET N-CH 150V POWER56 PowerTrench® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN Power56 3.3W (Ta), 136W (Tc) N-Channel - 150V 10A (Ta), 63A (Tc) 12.4 mOhm @ 10A, 10V 4V @ 250µA 63nC @ 10V 4480pF @ 75V 6V, 10V ±20V