Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Cree/Wolfspeed MOSFET N-CHANNEL 1200V 50A DIE Z-FET™ Obsolete Bulk SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) Surface Mount Die Die 313mW (Tj) N-Channel 1200V 50A (Tj) 110 mOhm @ 20A, 20V 4V @ 1mA 90.8nC @ 20V 1915pF @ 800V 20V +25V, -5V
NTE4151PT1G
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3,378
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ON Semiconductor MOSFET P-CH 20V 0.76A SC-89 - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SC-89, SOT-490 SC-89-3 313mW (Tj) P-Channel 20V 760mA (Tj) 360 mOhm @ 350mA, 4.5V 1.2V @ 250µA 2.1nC @ 4.5V 156pF @ 5V 1.8V, 4.5V ±6V
NTE4151PT1G
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2,064
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ON Semiconductor MOSFET P-CH 20V 0.76A SC-89 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SC-89, SOT-490 SC-89-3 313mW (Tj) P-Channel 20V 760mA (Tj) 360 mOhm @ 350mA, 4.5V 1.2V @ 250µA 2.1nC @ 4.5V 156pF @ 5V 1.8V, 4.5V ±6V
NTE4151PT1G
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708
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ON Semiconductor MOSFET P-CH 20V 0.76A SC-89 - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SC-89, SOT-490 SC-89-3 313mW (Tj) P-Channel 20V 760mA (Tj) 360 mOhm @ 350mA, 4.5V 1.2V @ 250µA 2.1nC @ 4.5V 156pF @ 5V 1.8V, 4.5V ±6V