Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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FDPF3860TYDTU
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VIEW
RFQ
2,210
In-stock
ON Semiconductor MOSFET N-CH 100V 20A TO-220F PowerTrench® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Formed Leads TO-220F-3 (Y-Forming) 33.8W (Tc) N-Channel - 100V 20A (Tc) 38.2 mOhm @ 5.9A, 10V 4.5V @ 250µA 35nC @ 10V 1800pF @ 25V 10V ±20V
BSZ42DN25NS3GATMA1
RFQ
VIEW
RFQ
1,778
In-stock
Infineon Technologies MOSFET N-CH 250V 5A TSDSON-8 OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8 33.8W (Tc) N-Channel - 250V 5A (Tc) 425 mOhm @ 2.5A, 10V 4V @ 13µA 5.5nC @ 10V 430pF @ 100V 10V ±20V
BSZ42DN25NS3GATMA1
RFQ
VIEW
RFQ
1,125
In-stock
Infineon Technologies MOSFET N-CH 250V 5A TSDSON-8 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8 33.8W (Tc) N-Channel - 250V 5A (Tc) 425 mOhm @ 2.5A, 10V 4V @ 13µA 5.5nC @ 10V 430pF @ 100V 10V ±20V
BSZ42DN25NS3GATMA1
RFQ
VIEW
RFQ
2,216
In-stock
Infineon Technologies MOSFET N-CH 250V 5A TSDSON-8 OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8 33.8W (Tc) N-Channel - 250V 5A (Tc) 425 mOhm @ 2.5A, 10V 4V @ 13µA 5.5nC @ 10V 430pF @ 100V 10V ±20V
FCPF13N60NT
RFQ
VIEW
RFQ
3,558
In-stock
ON Semiconductor MOSFET N-CH 600V 13A TO220F SuperMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F-3 (Y-Forming) 33.8W (Tc) N-Channel - 600V 13A (Tc) 258 mOhm @ 6.5A, 10V 4V @ 250µA 39.5nC @ 10V 1765pF @ 100V 10V ±30V
TSM60NB190CI C0G
RFQ
VIEW
RFQ
794
In-stock
Taiwan Semiconductor Corporation MOSFET N-CH 600V 18A ITO220 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab ITO-220 33.8W (Tc) N-Channel - 600V 18A (Tc) 190 mOhm @ 6A, 10V 4V @ 250µA 31nC @ 10V 1273pF @ 100V 10V ±30V
TSM60NB190CZ C0G
RFQ
VIEW
RFQ
2,659
In-stock
Taiwan Semiconductor Corporation MOSFET N-CHANNEL 600V 18A TO220 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 33.8W (Tc) N-Channel - 600V 18A (Tc) 190 mOhm @ 6A, 10V 4V @ 250µA 31nC @ 10V 1273pF @ 100V 10V ±30V
FDPF6N60ZUT
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VIEW
RFQ
1,249
In-stock
ON Semiconductor MOSFET N-CH 600V TO-220F-3 UniFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 33.8W (Tc) N-Channel - 600V 4.5A (Tc) 2 Ohm @ 2.25A, 10V 5V @ 250µA 20nC @ 10V 865pF @ 25V 10V ±30V
FDPF3860T
RFQ
VIEW
RFQ
2,507
In-stock
ON Semiconductor MOSFET N-CH 100V 20A TO-220F PowerTrench® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 33.8W (Tc) N-Channel - 100V 20A (Tc) 38.2 mOhm @ 5.9A, 10V 4.5V @ 250µA 35nC @ 10V 1800pF @ 25V 10V ±20V