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5 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
973
In-stock
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Infineon Technologies | MOSFET N-CH 20V 10A PQFN | HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-PowerVDFN | 6-PQFN (2x2) | 1.98W (Ta), 9.6W (Tc) | N-Channel | - | 20V | 10A (Ta), 12A (Tc) | 11.7 mOhm @ 8.5A, 4.5V | 1.1V @ 10µA | 14nC @ 4.5V | 1110pF @ 10V | 2.5V, 4.5V | ±12V | |||
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VIEW |
2,515
In-stock
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Infineon Technologies | MOSFET N-CH 20V 10A PQFN | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-PowerVDFN | 6-PQFN (2x2) | 1.98W (Ta), 9.6W (Tc) | N-Channel | - | 20V | 10A (Ta), 12A (Tc) | 11.7 mOhm @ 8.5A, 4.5V | 1.1V @ 10µA | 14nC @ 4.5V | 1110pF @ 10V | 2.5V, 4.5V | ±12V | |||
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VIEW |
2,381
In-stock
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Infineon Technologies | MOSFET N-CH 20V 10A PQFN | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-PowerVDFN | 6-PQFN (2x2) | 1.98W (Ta), 9.6W (Tc) | N-Channel | - | 20V | 10A (Ta), 12A (Tc) | 11.7 mOhm @ 8.5A, 4.5V | 1.1V @ 10µA | 14nC @ 4.5V | 1110pF @ 10V | 2.5V, 4.5V | ±12V | |||
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VIEW |
1,575
In-stock
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Infineon Technologies | MOSFET N-CH 20V 10A PQFN | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-PowerVDFN | 6-PQFN (2x2) | 1.98W (Ta), 9.6W (Tc) | N-Channel | - | 20V | 10A (Ta), 12A (Tc) | 11.7 mOhm @ 8.5A, 4.5V | 1.1V @ 10µA | 14nC @ 4.5V | 1110pF @ 10V | 2.5V, 4.5V | ±12V | |||
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VIEW |
2,290
In-stock
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Infineon Technologies | MOSFET N-CH 20V 10A PQFN | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-PowerVDFN | 6-PQFN (2x2) | 1.98W (Ta), 9.6W (Tc) | N-Channel | - | 20V | 10A (Ta), 12A (Tc) | 11.7 mOhm @ 8.5A, 4.5V | 1.1V @ 10µA | 14nC @ 4.5V | 1110pF @ 10V | 2.5V, 4.5V | ±12V | |||
