Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRL6283MTRPBF
RFQ
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RFQ
3,126
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Infineon Technologies MOSFET N-CH 20V 211A DIRECTFET HEXFET®, StrongIRFET™ Obsolete Digi-Reel® MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric MD DIRECTFET™ MD 2.1W (Ta), 63W (Tc) N-Channel 20V 38A (Ta), 211A (Tc) 0.75 mOhm @ 50A, 10V 1.1V @ 100µA 158nC @ 4.5V 8292pF @ 10V 2.5V, 4.5V ±12V
IRL6283MTRPBF
RFQ
VIEW
RFQ
2,646
In-stock
Infineon Technologies MOSFET N-CH 20V 211A DIRECTFET HEXFET®, StrongIRFET™ Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric MD DIRECTFET™ MD 2.1W (Ta), 63W (Tc) N-Channel 20V 38A (Ta), 211A (Tc) 0.75 mOhm @ 50A, 10V 1.1V @ 100µA 158nC @ 4.5V 8292pF @ 10V 2.5V, 4.5V ±12V
IRL6283MTRPBF
RFQ
VIEW
RFQ
3,168
In-stock
Infineon Technologies MOSFET N-CH 20V 211A DIRECTFET HEXFET®, StrongIRFET™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric MD DIRECTFET™ MD 2.1W (Ta), 63W (Tc) N-Channel 20V 38A (Ta), 211A (Tc) 0.75 mOhm @ 50A, 10V 1.1V @ 100µA 158nC @ 4.5V 8292pF @ 10V 2.5V, 4.5V ±12V
BSZ150N10LS3GATMA1
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RFQ
1,758
In-stock
Infineon Technologies MOSFET N-CH 100V 40A 8TSDSON OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8 2.1W (Ta), 63W (Tc) N-Channel 100V 40A (Tc) 15 mOhm @ 20A, 10V 2.1V @ 33µA 35nC @ 10V 2500pF @ 50V 4.5V, 10V ±20V
BSZ150N10LS3GATMA1
RFQ
VIEW
RFQ
2,617
In-stock
Infineon Technologies MOSFET N-CH 100V 40A 8TSDSON OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8 2.1W (Ta), 63W (Tc) N-Channel 100V 40A (Tc) 15 mOhm @ 20A, 10V 2.1V @ 33µA 35nC @ 10V 2500pF @ 50V 4.5V, 10V ±20V
BSZ150N10LS3GATMA1
RFQ
VIEW
RFQ
784
In-stock
Infineon Technologies MOSFET N-CH 100V 40A 8TSDSON OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8 2.1W (Ta), 63W (Tc) N-Channel 100V 40A (Tc) 15 mOhm @ 20A, 10V 2.1V @ 33µA 35nC @ 10V 2500pF @ 50V 4.5V, 10V ±20V
BSZ160N10NS3GATMA1
RFQ
VIEW
RFQ
2,259
In-stock
Infineon Technologies MOSFET N-CH 100V 40A TSDSON-8 OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8 2.1W (Ta), 63W (Tc) N-Channel 100V 8A (Ta), 40A (Tc) 16 mOhm @ 20A, 10V 3.5V @ 12µA 25nC @ 10V 1700pF @ 50V 6V, 10V ±20V
BSZ160N10NS3GATMA1
RFQ
VIEW
RFQ
1,991
In-stock
Infineon Technologies MOSFET N-CH 100V 40A TSDSON-8 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8 2.1W (Ta), 63W (Tc) N-Channel 100V 8A (Ta), 40A (Tc) 16 mOhm @ 20A, 10V 3.5V @ 12µA 25nC @ 10V 1700pF @ 50V 6V, 10V ±20V
BSZ160N10NS3GATMA1
RFQ
VIEW
RFQ
3,390
In-stock
Infineon Technologies MOSFET N-CH 100V 40A TSDSON-8 OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8 2.1W (Ta), 63W (Tc) N-Channel 100V 8A (Ta), 40A (Tc) 16 mOhm @ 20A, 10V 3.5V @ 12µA 25nC @ 10V 1700pF @ 50V 6V, 10V ±20V
BSZ028N04LSATMA1
RFQ
VIEW
RFQ
1,231
In-stock
Infineon Technologies MOSFET N-CH 40V 21A 8TSDSON OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8-FL 2.1W (Ta), 63W (Tc) N-Channel 40V 21A (Ta), 40A (Tc) 2.8 mOhm @ 20A, 10V - 32nC @ 10V 2300pF @ 20V 4.5V, 10V ±20V