Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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NVMFS5832NLWFT3G
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3,641
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ON Semiconductor MOSFET N-CH 40V 120A SO8FL - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN 5-DFN (5x6) (8-SOFL) 3.7W (Ta), 127W (Tc) N-Channel 40V 21A (Ta) 4.2 mOhm @ 20A, 10V 2.4V @ 250µA 51nC @ 10V 2700pF @ 25V 4.5V, 10V ±20V
NVMFS5832NLT3G
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RFQ
801
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ON Semiconductor MOSFET N-CH 40V 120A SO8FL - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN 5-DFN (5x6) (8-SOFL) 3.7W (Ta), 127W (Tc) N-Channel 40V 21A (Ta) 4.2 mOhm @ 20A, 10V 2.4V @ 250µA 51nC @ 10V 2700pF @ 25V 4.5V, 10V ±20V
NVMFS5832NLWFT1G
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RFQ
3,553
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ON Semiconductor MOSFET N-CH 40V 120A SO8FL - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN 5-DFN (5x6) (8-SOFL) 3.7W (Ta), 127W (Tc) N-Channel 40V 21A (Ta) 4.2 mOhm @ 20A, 10V 2.4V @ 250µA 51nC @ 10V 2700pF @ 25V 4.5V, 10V ±20V
NVMFS5832NLT1G
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RFQ
1,445
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ON Semiconductor MOSFET N-CH 40V 120A SO8FL - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN 5-DFN (5x6) (8-SOFL) 3.7W (Ta), 127W (Tc) N-Channel 40V 21A (Ta) 4.2 mOhm @ 20A, 10V 2.4V @ 250µA 51nC @ 10V 2700pF @ 25V 4.5V, 10V ±20V
NVMFS5832NLT1G
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RFQ
3,222
In-stock
ON Semiconductor MOSFET N-CH 40V 120A SO8FL - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN 5-DFN (5x6) (8-SOFL) 3.7W (Ta), 127W (Tc) N-Channel 40V 21A (Ta) 4.2 mOhm @ 20A, 10V 2.4V @ 250µA 51nC @ 10V 2700pF @ 25V 4.5V, 10V ±20V
NVMFS5832NLT1G
RFQ
VIEW
RFQ
2,006
In-stock
ON Semiconductor MOSFET N-CH 40V 120A SO8FL - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN 5-DFN (5x6) (8-SOFL) 3.7W (Ta), 127W (Tc) N-Channel 40V 21A (Ta) 4.2 mOhm @ 20A, 10V 2.4V @ 250µA 51nC @ 10V 2700pF @ 25V 4.5V, 10V ±20V