Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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APT5016BFLLG
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2,750
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Microsemi Corporation MOSFET N-CH 500V 30A TO-247 POWER MOS 7® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 [B] 329W (Tc) N-Channel - 500V 30A (Tc) 160 mOhm @ 15A, 10V 5V @ 1mA 72nC @ 10V 2833pF @ 25V 10V ±30V
TSM60NB099PW C1G
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3,313
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Taiwan Semiconductor Corporation MOSFET N-CHANNEL 600V 38A TO247 - Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 329W (Tc) N-Channel - 600V 38A (Tc) 99 mOhm @ 11.7A, 10V 4V @ 250µA 62nC @ 10V 2587pF @ 100V 10V ±30V
SIHG40N60E-GE3
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1,164
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Vishay Siliconix MOSFET N-CH 600V 40A TO247AC E Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AC 329W (Tc) N-Channel - 600V 40A (Tc) 75 mOhm @ 20A, 10V 4V @ 250µA 197nC @ 10V 4436pF @ 100V 10V ±30V