Supplier Device Package :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
SCT2080KEC
RFQ
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RFQ
2,630
In-stock
Rohm Semiconductor MOSFET N-CH 1200V 40A TO-247 - Active Tube SiCFET (Silicon Carbide) 175°C (TJ) Through Hole TO-247-3 TO-247 262W (Tc) N-Channel 1200V 40A (Tc) 117 mOhm @ 10A, 18V 4V @ 4.4mA 106nC @ 18V 2080pF @ 800V 18V +22V, -6V
SCT3040KLGC11
RFQ
VIEW
RFQ
2,729
In-stock
Rohm Semiconductor MOSFET NCH 1.2KV 55A TO247N - Active Tube SiCFET (Silicon Carbide) 175°C (TJ) Through Hole TO-247-3 TO-247N 262W (Tc) N-Channel 1200V 55A (Tc) 52 mOhm @ 20A, 18V 5.6V @ 10mA 107nC @ 18V 1337pF @ 800V 18V +22V, -4V
SCT3030ALGC11
RFQ
VIEW
RFQ
3,384
In-stock
Rohm Semiconductor MOSFET NCH 650V 70A TO247N - Active Tube SiCFET (Silicon Carbide) 175°C (TJ) Through Hole TO-247-3 TO-247N 262W (Tc) N-Channel 650V 70A (Tc) 39 mOhm @ 27A, 18V 5.6V @ 13.3mA 104nC @ 18V 1526pF @ 500V 18V +22V, -4V
SCH2080KEC
RFQ
VIEW
RFQ
690
In-stock
Rohm Semiconductor MOSFET N-CH 1200V 40A TO-247 - Active Tube SiCFET (Silicon Carbide) 175°C (TJ) Through Hole TO-247-3 TO-247 262W (Tc) N-Channel 1200V 40A (Tc) 117 mOhm @ 10A, 18V 4V @ 4.4mA 106nC @ 18V 1850pF @ 800V 18V +22V, -6V