Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXTH130N15T
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3,038
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IXYS MOSFET N-CH 150V 130A TO-247 TrenchHV™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 750W (Tc) N-Channel 150V 130A (Tc) 12 mOhm @ 65A, 10V 4.5V @ 1mA 113nC @ 10V 9800pF @ 25V 10V ±30V
IXTH102N20T
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RFQ
1,617
In-stock
IXYS MOSFET N-CH 200V 102A TO-247 TrenchHV™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 750W (Tc) N-Channel 200V 102A (Tc) 23 mOhm @ 500mA, 10V 4.5V @ 1mA 114nC @ 10V 6800pF @ 25V 10V ±30V
IXTQ130N15T
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RFQ
2,937
In-stock
IXYS MOSFET N-CH 150V 130A TO-3P TrenchHV™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 750W (Tc) N-Channel 150V 130A (Tc) 12 mOhm @ 65A, 10V 4.5V @ 1mA 113nC @ 10V 9800pF @ 25V 10V ±30V
IXTQ102N20T
RFQ
VIEW
RFQ
3,500
In-stock
IXYS MOSFET N-CH 200V 102A TO3P TrenchHV™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 750W (Tc) N-Channel 200V 102A (Tc) 23 mOhm @ 500mA, 10V 4.5V @ 1mA 114nC @ 10V 6800pF @ 25V - -
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RFQ
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RFQ
1,347
In-stock
IXYS MOSFET N-CH 200V 102A PLUS220 TrenchHV™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3, Short Tab PLUS220 750W (Tc) N-Channel 200V 102A (Tc) 23 mOhm @ 500mA, 10V 4.5V @ 1mA 114nC @ 10V 6800pF @ 25V 10V ±30V
FDH44N50
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RFQ
1,825
In-stock
ON Semiconductor MOSFET N-CH 500V 44A TO-247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 750W (Tc) N-Channel 500V 44A (Tc) 120 mOhm @ 22A, 10V 4V @ 250µA 108nC @ 10V 5335pF @ 25V 10V ±30V