Drain to Source Voltage (Vdss) :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
BUK7614-55,118
RFQ
VIEW
RFQ
3,752
In-stock
NXP USA Inc. MOSFET N-CH 55V 68A D2PAK TrenchMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 142W (Tc) N-Channel - 55V 68A (Tc) 14 mOhm @ 25A, 10V 4V @ 1mA - 2900pF @ 25V 10V ±16V
FQP7N60
RFQ
VIEW
RFQ
1,765
In-stock
ON Semiconductor MOSFET N-CH 600V 7.4A TO-220 QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 142W (Tc) N-Channel - 600V 7.4A (Tc) 1 Ohm @ 3.7A, 10V 5V @ 250µA 38nC @ 10V 1430pF @ 25V 10V ±30V
PSMN2R0-30YLDX
RFQ
VIEW
RFQ
2,241
In-stock
Nexperia USA Inc. MOSFET N-CH 30V 100A LFPAK - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount SC-100, SOT-669 LFPAK56, Power-SO8 142W (Tc) N-Channel - 30V 100A (Tc) 2 mOhm @ 25A, 10V 2.2V @ 1mA 46nC @ 10V 2969pF @ 15V 4.5V, 10V ±20V
PSMN2R0-30YLDX
RFQ
VIEW
RFQ
702
In-stock
Nexperia USA Inc. MOSFET N-CH 30V 100A LFPAK - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount SC-100, SOT-669 LFPAK56, Power-SO8 142W (Tc) N-Channel - 30V 100A (Tc) 2 mOhm @ 25A, 10V 2.2V @ 1mA 46nC @ 10V 2969pF @ 15V 4.5V, 10V ±20V
PSMN2R0-30YLDX
RFQ
VIEW
RFQ
2,984
In-stock
Nexperia USA Inc. MOSFET N-CH 30V 100A LFPAK - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount SC-100, SOT-669 LFPAK56, Power-SO8 142W (Tc) N-Channel - 30V 100A (Tc) 2 mOhm @ 25A, 10V 2.2V @ 1mA 46nC @ 10V 2969pF @ 15V 4.5V, 10V ±20V
FQP6N70
RFQ
VIEW
RFQ
1,319
In-stock
ON Semiconductor MOSFET N-CH 700V 6.2A TO-220 QFET® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 142W (Tc) N-Channel - 700V 6.2A (Tc) 1.5 Ohm @ 3.1A, 10V 5V @ 250µA 40nC @ 10V 1400pF @ 25V 10V ±30V
FQP16N25
RFQ
VIEW
RFQ
1,818
In-stock
ON Semiconductor MOSFET N-CH 250V 16A TO-220 QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 142W (Tc) N-Channel - 250V 16A (Tc) 230 mOhm @ 8A, 10V 5V @ 250µA 35nC @ 10V 1200pF @ 25V 10V ±30V
TPH2R608NH,L1Q
RFQ
VIEW
RFQ
3,999
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 75V 150A SOP8 U-MOSVIII-H Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 142W (Tc) N-Channel - 75V 150A (Tc) 2.6 mOhm @ 50A, 10V 4V @ 1mA 72nC @ 10V 6000pF @ 37.5V 10V ±20V
TPH2R608NH,L1Q
RFQ
VIEW
RFQ
1,924
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 75V 150A SOP8 U-MOSVIII-H Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 142W (Tc) N-Channel - 75V 150A (Tc) 2.6 mOhm @ 50A, 10V 4V @ 1mA 72nC @ 10V 6000pF @ 37.5V 10V ±20V
TPH2R608NH,L1Q
RFQ
VIEW
RFQ
3,644
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 75V 150A SOP8 U-MOSVIII-H Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 142W (Tc) N-Channel - 75V 150A (Tc) 2.6 mOhm @ 50A, 10V 4V @ 1mA 72nC @ 10V 6000pF @ 37.5V 10V ±20V