Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SIS414DN-T1-GE3
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Vishay Siliconix MOSFET N-CH 30V 20A 1212-8 PPAK TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 3.4W (Ta), 31W (Tc) N-Channel - 30V 20A (Tc) 16 mOhm @ 10A, 4.5V 1.5V @ 250µA 33nC @ 10V 795pF @ 15V 2.5V, 4.5V ±12V
SIS414DN-T1-GE3
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3,833
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Vishay Siliconix MOSFET N-CH 30V 20A 1212-8 PPAK TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 3.4W (Ta), 31W (Tc) N-Channel - 30V 20A (Tc) 16 mOhm @ 10A, 4.5V 1.5V @ 250µA 33nC @ 10V 795pF @ 15V 2.5V, 4.5V ±12V
SIS414DN-T1-GE3
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734
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Vishay Siliconix MOSFET N-CH 30V 20A 1212-8 PPAK TrenchFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 3.4W (Ta), 31W (Tc) N-Channel - 30V 20A (Tc) 16 mOhm @ 10A, 4.5V 1.5V @ 250µA 33nC @ 10V 795pF @ 15V 2.5V, 4.5V ±12V